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MJE2955TJ69Z PDF预览

MJE2955TJ69Z

更新时间： 2024-09-26 15:43:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关晶体管
页数 文件大小 规格书
4页 37K
描述
Power Bipolar Transistor, 1-Element, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

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中文翻译

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MJE2955TJ69Z 技术参数

生命周期：Obsolete零件包装代码：SFM
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknownHTS代码：8541.21.00.95
风险等级：5.32配置：SINGLE
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT认证状态：Not Qualified
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MJE2955TJ69Z 数据手册

 浏览型号MJE2955TJ69Z的Datasheet PDF文件第2页浏览型号MJE2955TJ69Z的Datasheet PDF文件第3页浏览型号MJE2955TJ69Z的Datasheet PDF文件第4页 
MJE2955T  
General Purpose and Switching Applications  
•
•
DC Current Gain Specified to I = 10 A  
High Current Gain Bandwidth Product : f = 2MHz (Min.)  
C
T
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 70  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
CBO  
CEO  
EBO  
- 60  
- 5  
V
I
- 10  
A
C
I
Base Current  
- 6  
A
B
P
Collector Dissipation (T =25°C)  
75  
W
W
°C  
°C  
C
C
P
T
T
Collector Dissipation (T =25°C)  
0.6  
C
a
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector- Emitter Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
V
BV  
I = - 200mA, I = 0  
-60  
CEO  
CEO  
C
B
I
I
I
V
= - 30V, I = 0  
-700  
-1  
µA  
CE  
CE  
CE  
B
Collector Cut-off Current  
V
V
= - 70V, V (off) = 1.5V  
mA  
mA  
CEX1  
CEX2  
BE  
Collector Cut-off Current  
= - 70V, V (off) = 1.5V  
-5  
BE  
@ T = 150°C  
C
I
Emitter Cut-off Current  
* DC Current Gain  
V
= - 5V, I = 0  
-5  
mA  
EBO  
EB  
C
h
V
V
= - 4V, I = - 4A  
20  
5
100  
FE  
CE  
CE  
C
= - 4V, I = - 10A  
C
V
(sat)  
(on)  
* Collector-Emitter Saturation Voltage  
I
I
= - 4A, I = - 0.4A  
-1.1  
-8  
V
V
CE  
BE  
C
C
B
= - 10A, I = - 3.3A  
B
V
* Base-Emitter ON Voltage  
V
V
= - 4V, I = - 4A  
-1.8  
V
CE  
CE  
C
f
Current Gain Bandwidth Product  
= - 10V, I = - 500mA  
2
MHz  
T
C
* Pulse test: PW≤300µs, duty cycle≤2% Pulse  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, February 2001  
1234

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