SEMICONDUCTOR TECHNICAL DATA
. . . designed for use in general–purpose amplifier and switching applications.
*Motorola Preferred Device
•
•
DC Current Gain Specified to 10 Amperes
High Current Gain — Bandwidth Product —
10 AMPERE
COMPLEMENTARY
SILICON
f
T
= 2.0 MHz (Min) @ I = 500 mAdc
C
POWER TRANSISTORS
60 VOLTS
MAXIMUM RATINGS
Rating
Symbol
Value
60
Unit
Vdc
75 WATTS
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
V
CEO
V
CB
70
Vdc
V
EB
5.0
10
Vdc
I
C
Adc
Base Current
I
6.0
75
Adc
B
Total Power Dissipation @ T = 25 C
C
Derate above 25 C
P †
D
Watts
0.6
W/ C
C
MJE3055T, MJE2955T
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
J
stg
CASE 221A–06
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
1.67
C/W
JC
†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.
10
7.0
100 µs
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
1.0 ms
5.0 ms
5.0
dc
down. Safe operating area curves indicate I – V
limits of
C
CE
3.0
2.0
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
1.0
0.7
0.5
The data of Figure 1 is based on T
= 150 C. T is vari-
C
J(pk)
able depending on conditions. Second breakdown pulse lim-
its are valid for duty cycles to 10% provided T 150 C.
T = 150°C
J
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED
J(pk)
0.3
0.2
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown. (See AN415A)
T = 25°C (D = 0.1)
C
0.1
5.0
7.0
10
20
30
50 60
V , COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Active–Region Safe Operating Area
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
3–628
Motorola Bipolar Power Transistor Device Data