MJE270 (NPN),
MJE271 (PNP)
Complementary Silicon
Power Transistors
Features
http://onsemi.com
• High Safe Operating Area
I
@ 40 V, 1.0 s = 0.375 A
S/B
2.0 AMPERE
• Collector−Emitter Sustaining Voltage
= 100 Vdc (Min)
COMPLEMENTARY
POWER DARLINGTON
TRANSISTORS
V
CEO(sus)
• High DC Current Gain
@ 120 mA, 10 V = 1500 (Min)
h
FE
100 VOLTS, 15 WATTS
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
100
Unit
Vdc
Vdc
Vdc
Adc
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
100
CB
EB
TO−225
CASE 77
STYLE 3
V
5.0
Collector Current − Continuous
− Peak
I
2.0
4.0
3
2
1
C
Base Current
I
0.1
Adc
B
Total Power Dissipation @ T = 25_C
P
P
15
0.12
W
W/_C
W
W/_C
C
D
D
Derate above 25_C
MARKING DIAGRAM
Total Power Dissipation @ T = 25_C
1.5
0.012
A
Derate above 25_C
1 BASE
Operating and Storage Junction
Temperature Range
T , T
J
−65 to +150
_C
stg
YWW
JE27xG
2 COLLECTOR
3 EMITTER
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
8.33
83.3
Unit
_C/W
_C/W
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
R
q
JC
Y
= Year
R
q
JA
WW
= Work Week
JE27x = Specific Device Code
x= 0 or 1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
G
= Pb−Free Package
ORDERING INFORMATION
Device
MJE270
Package
Shipping
TO−225
500 Units/Box
500 Units/Box
MJE270G
TO−225
(Pb−Free)
MJE271
TO−225
500 Units/Box
500 Units/Box
MJE271G
TO−225
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 6
MJE270/D