5秒后页面跳转
MJE270TG PDF预览

MJE270TG

更新时间: 2024-11-03 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管功率双极晶体管
页数 文件大小 规格书
3页 59K
描述
2.0 A,100 V,NPN 达林顿双极功率晶体管

MJE270TG 数据手册

 浏览型号MJE270TG的Datasheet PDF文件第2页浏览型号MJE270TG的Datasheet PDF文件第3页 
MJE270 (NPN),  
MJE271 (PNP)  
Complementary Silicon  
Power Transistors  
Features  
http://onsemi.com  
High Safe Operating Area  
I
@ 40 V, 1.0 s = 0.375 A  
S/B  
2.0 AMPERE  
Collector−Emitter Sustaining Voltage  
= 100 Vdc (Min)  
COMPLEMENTARY  
POWER DARLINGTON  
TRANSISTORS  
V
CEO(sus)  
High DC Current Gain  
@ 120 mA, 10 V = 1500 (Min)  
h
FE  
100 VOLTS, 15 WATTS  
Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
100  
CB  
EB  
TO−225  
CASE 77  
STYLE 3  
V
5.0  
Collector Current − Continuous  
− Peak  
I
2.0  
4.0  
3
2
1
C
Base Current  
I
0.1  
Adc  
B
Total Power Dissipation @ T = 25_C  
P
P
15  
0.12  
W
W/_C  
W
W/_C  
C
D
D
Derate above 25_C  
MARKING DIAGRAM  
Total Power Dissipation @ T = 25_C  
1.5  
0.012  
A
Derate above 25_C  
1 BASE  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
_C  
stg  
YWW  
JE27xG  
2 COLLECTOR  
3 EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.33  
83.3  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
Y
= Year  
R
q
JA  
WW  
= Work Week  
JE27x = Specific Device Code  
x= 0 or 1  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not normal  
operating conditions) and are not valid simultaneously. If these limits are exceeded,  
device functional operation is not implied, damage may occur and reliability may be  
affected.  
G
= Pb−Free Package  
ORDERING INFORMATION  
Device  
MJE270  
Package  
Shipping  
TO−225  
500 Units/Box  
500 Units/Box  
MJE270G  
TO−225  
(Pb−Free)  
MJE271  
TO−225  
500 Units/Box  
500 Units/Box  
MJE271G  
TO−225  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 6  
MJE270/D  

与MJE270TG相关器件

型号 品牌 获取价格 描述 数据表
MJE271 TRSYS

获取价格

NPN PLASTIC POWER TRANSISTOR
MJE271 MOTOROLA

获取价格

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS
MJE271 ONSEMI

获取价格

COMPLEMENTARY POWER DARLINGTON TRANSISTORS
MJE271G ONSEMI

获取价格

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS
MJE2801 MOTOROLA

获取价格

10A, 60V, NPN, Si, POWER TRANSISTOR, TO-127, PLASTIC, CASE 90-05, 3 PIN
MJE2801 MOSPEC

获取价格

POWER TRANSISTORS(10A,60V,75W)
MJE2801 NJSEMI

获取价格

BJT
MJE2801T MOSPEC

获取价格

POWER TRANSISTORS(10A,60V,75W)
MJE2801T ISC

获取价格

isc Silicon NPN Power Transistor
MJE2801T NJSEMI

获取价格

BJT