Datasheet > MJE2955T

MJE2955T

更新时间： 2024-11-25 04:15:31

品牌	Logo	应用领域
友顺 - UTC		晶体晶体管开关高压局域网
页数	文件大小	规格书
2页	94K
描述
HIGH VOLTAGE TRANSISTOR

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MJE2955T 数据手册

UTC MJE2955T PNP EPITAXIAL SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTOR

DESCRIPTION

The UTC MJE2955T is designed for general

purpose of amplifier and switching applications.

TO-220

1:BASE 2: COLLECTOR 3: EMITTER

ABSOLUTE MAXIMUM RATINGS _{( Operating temperature range applies unless otherwise specified )}

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

TSTG

RATING

UNIT

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Total Power Dissipation(Ta=25°C)

Collector current

Junction Temperature

Storage Temperature

Base Current

150

-55 ~ +150

ELECTRICAL CHARACTERISTICS_{(Ta=25°C,unless otherwise specified)}

PARAMETER

SYMBOL

TEST CONDITIONS

Ic=200mA

MIN TYP MAX UNIT

Collector-emitter breakdown voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector cut-off current

BVCEO

VBCBO

BVEBO

ICBO

µA

Ic=10mA

IE=10mA

VCB=70V

VCE=30V

700

ICEO

ICEX

IEBO

VCE=70V,VEB(off)=1.5V

VEB=5V

Emitter cut-off current

Collector-emitter saturation voltage

VCE(SAT)1

VCE(SAT)2

VBE(ON)

hFE1

IC=4A,IB=0.4A

IC=10A,IB=3.3A

VCE=4V,IC=4A

IC=4A,VCE=4V

IC=10A,VCE=4V

VCE=10V,IC=0.5A,f=1MHz

1.1

8.0

1.8

100

Baser-emitter on voltage

DC current gain

hFE2

Current gain bandwidth product

MHZ

UTC

UNISONIC TECHNOLOGIES CO. LTD

QW-R203-012,B

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MJE2955TAJ	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
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MJE2955TAU	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE2955TBG	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE2955TC	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast