Datasheet > MJE2801T

MJE2801T

更新时间： 2024-11-25 12:47:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	101K
描述
isc Silicon NPN Power Transistor

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中文翻译

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MJE2801T 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJE2801T

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 60V(Min)

·High DC Current Gain-

: h_FE= 25-100@I_C= 3A

·Complement to Type MJE2901T

APPLICATIONS

·Designed for use as an output device in complementary

audio amplifiers up to 35 watts music power per channel.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

Collector Current-Continuous

Base Current-Continuous

I_B

Collector Power Dissipation

@ T_C=25℃

P_C

℃

T_J

Junction Temperature

150

-55~150

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.67

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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与MJE2801T相关器件

型号	品牌	获取价格	描述	数据表
MJE2901	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-127, Plastic
MJE2901	ASI	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy,
MJE2901T	ISC	获取价格	isc Silicon PNP Power Transistor
MJE2901T	MOSPEC	获取价格	POWER TRANSISTORS(10A,60V,75W)
MJE2901T	CENTRAL	获取价格	60V,10A,75W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Swit
MJE2901T	NJSEMI	获取价格	BJT
MJE2901TLEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE2905T	ASI	获取价格	Transistor
MJE2955	MOSPEC	获取价格	POWER TRANSISTORS(10A,60V,75W)
MJE2955	FAIRCHILD	获取价格	General Purpose and Switching Applications