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MJE271G

更新时间： 2024-11-02 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 59K
描述
2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

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MJE271G 数据手册

 浏览型号MJE271G的Datasheet PDF文件第2页浏览型号MJE271G的Datasheet PDF文件第3页 
MJE270 (NPN),  
MJE271 (PNP)  
Complementary Silicon  
Power Transistors  
Features  
http://onsemi.com  
• High Safe Operating Area  
I
@ 40 V, 1.0 s = 0.375 A  
S/B  
2.0 AMPERE  
• Collector−Emitter Sustaining Voltage  
= 100 Vdc (Min)  
COMPLEMENTARY  
POWER DARLINGTON  
TRANSISTORS  
V
CEO(sus)  
• High DC Current Gain  
@ 120 mA, 10 V = 1500 (Min)  
h
FE  
100 VOLTS, 15 WATTS  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
100  
CB  
EB  
TO−225  
CASE 77  
STYLE 3  
V
5.0  
Collector Current − Continuous  
− Peak  
I
2.0  
4.0  
3
2
1
C
Base Current  
I
0.1  
Adc  
B
Total Power Dissipation @ T = 25_C  
P
P
15  
0.12  
W
W/_C  
W
W/_C  
C
D
D
Derate above 25_C  
MARKING DIAGRAM  
Total Power Dissipation @ T = 25_C  
1.5  
0.012  
A
Derate above 25_C  
1 BASE  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−65 to +150  
_C  
stg  
YWW  
JE27xG  
2 COLLECTOR  
3 EMITTER  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.33  
83.3  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
Y
= Year  
R
q
JA  
WW  
= Work Week  
JE27x = Specific Device Code  
x= 0 or 1  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not normal  
operating conditions) and are not valid simultaneously. If these limits are exceeded,  
device functional operation is not implied, damage may occur and reliability may be  
affected.  
G
= Pb−Free Package  
ORDERING INFORMATION  
Device  
MJE270  
Package  
Shipping  
TO−225  
500 Units/Box  
500 Units/Box  
MJE270G  
TO−225  
(Pb−Free)  
MJE271  
TO−225  
500 Units/Box  
500 Units/Box  
MJE271G  
TO−225  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 6  
MJE270/D  
123

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MJE271G 替代型号

型号 品牌 替代类型 描述 数据表
BD682G ONSEMI

类似代替

 Plastic Medium−Power Silicon PNP Darlingtons
MJE271 ONSEMI

类似代替

 COMPLEMENTARY POWER DARLINGTON TRANSISTORS
MJE271 MOTOROLA

功能相似

 2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

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