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MJE2955T PDF预览

MJE2955T

更新时间: 2024-11-25 10:55:47
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页数 文件大小 规格书
3页 93K
描述
Silicon PNP Power Transistors MJE2955T

MJE2955T 数据手册

 浏览型号MJE2955T的Datasheet PDF文件第2页浏览型号MJE2955T的Datasheet PDF文件第3页 
SavantIC Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
MJE2955T  
DESCRIPTION  
·With TO-220 package  
·Complement to type MJE3055T  
·DC current gain -hFE = 20–70 @ IC = -4 Adc  
·Collector–emitter saturation voltage -  
V
CE(sat) = -1.1 Vdc (Max) @ IC =- 4 Adc  
APPLICATIONS  
·Designed for general–purpose  
switching and amplifier applications.  
PINNING  
PIN  
DESCRIPTION  
1
Emitter  
Collector;connected to  
mounting base  
2
Fig.1 simplified outline (TO-220) and symbol  
3
Base  
ABSOLUTE MAXIMUM RATINGS(TC=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
-70  
UNIT  
V
Open base  
-60  
V
Open collector  
-5  
V
-10  
A
IB  
Base current  
-6  
A
PC  
Collector power dissipation  
Junction temperature  
Storage temperature  
TC=25ꢀ  
75  
W
150  
-55~150  
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
VALUE  
UNIT  
Thermal resistance junction to case  
1.67  
/W  
Rth j-c  

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