Datasheet > MJE2955T

MJE2955T

更新时间： 2024-02-22 20:23:19

品牌	Logo	应用领域
SAVANTIC		晶体晶体管开关局域网
页数	文件大小	规格书
3页	93K
描述
Silicon PNP Power Transistors MJE2955T

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中文翻译

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技术参数
数据手册

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MJE2955T 技术参数

生命周期：	Obsolete	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	unknown	HTS代码：	8541.21.00.95
风险等级：	5.32	配置：	SINGLE
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	表面贴装：	NO
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MJE2955T 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

MJE2955T

DESCRIPTION

·With TO-220 package

·Complement to type MJE3055T

·DC current gain -h_FE= 20–70 @ I_C= -4 Adc

·Collector–emitter saturation voltage -

_CE(sat)= -1.1 Vdc (Max) @ I_C=- 4 Adc

APPLICATIONS

·Designed for general–purpose

switching and amplifier applications.

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Fig.1 simplified outline (TO-220) and symbol

Base

ABSOLUTE MAXIMUM RATINGS(T_C=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CONDITIONS

Open emitter

VALUE

-70

UNIT

Open base

-60

Open collector

-5

-10

I_B

Base current

-6

P_C

Collector power dissipation

Junction temperature

Storage temperature

T_C=25ꢀ

ꢀ

150

-55~150

T_j

ꢀ

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Thermal resistance junction to case

1.67

ꢀ/W

R_{th j-c}

12 3

中文翻译

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与MJE2955T相关器件

型号	品牌	获取价格	描述	数据表
MJE2955T_03	STMICROELECTRONICS	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
MJE2955T_10	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE2955T_15	UTC	获取价格	HIGH VOLTAGE TRANSISTOR
MJE2955TA	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE2955TAF	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE2955TAJ	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE2955TAK	ONSEMI	获取价格	TRANSISTOR 10 A, 60 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu
MJE2955TAU	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE2955TBG	ONSEMI	获取价格	10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE2955TC	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast