5秒后页面跳转
MJE253 PDF预览

MJE253

更新时间: 2024-11-03 14:50:15
品牌 Logo 应用领域
NJSEMI /
页数 文件大小 规格书
1页 57K
描述
Trans GP BJT PNP 100V 4A 3-Pin TO-126

MJE253 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknown风险等级:5.7
Is Samacsys:N最大集电极电流 (IC):4 A
集电极-发射极最大电压:100 V配置:SINGLE
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:PNP端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
标称过渡频率 (fT):2 MHzBase Number Matches:1

MJE253 数据手册

  

与MJE253相关器件

型号 品牌 获取价格 描述 数据表
MJE253G ONSEMI

获取价格

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS
MJE253LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic
MJE254 CENTRAL

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJE254 NJSEMI

获取价格

Trans GP BJT PNP 100V 4A 3-Pin TO-126
MJE254LEADFREE CENTRAL

获取价格

暂无描述
MJE270 MOTOROLA

获取价格

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS
MJE270 ONSEMI

获取价格

COMPLEMENTARY POWER DARLINGTON TRANSISTORS
MJE270 TRSYS

获取价格

NPN PLASTIC POWER TRANSISTOR
MJE270G ONSEMI

获取价格

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS
MJE270TG ONSEMI

获取价格

2.0 A,100 V,NPN 达林顿双极功率晶体管