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MJE253G PDF预览

MJE253G

更新时间： 2024-11-02 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
6页 90K
描述
Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

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中文翻译

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MJE253G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-225AA包装说明：ROHS COMPLIANT, PLASTIC, CASE 77-09, TO-225, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.75
Factory Lead Time：1 week风险等级：0.68
最大集电极电流 (IC)：4 A集电极-发射极最大电压：100 V
配置：SINGLE最小直流电流增益 (hFE)：15
JEDEC-95代码：TO-225AAJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：1.5 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：40 MHz
Base Number Matches：1

MJE253G 数据手册

 浏览型号MJE253G的Datasheet PDF文件第2页浏览型号MJE253G的Datasheet PDF文件第3页浏览型号MJE253G的Datasheet PDF文件第4页浏览型号MJE253G的Datasheet PDF文件第5页浏览型号MJE253G的Datasheet PDF文件第6页 
MJE243 − NPN,  
MJE253 − PNP  
Preferred Device  
Complementary Silicon  
Power Plastic Transistors  
These devices are designed for low power audio amplifier and  
low−current, high−speed switching applications.  
http://onsemi.com  
Features  
4.0 AMPERES  
• High Collector−Emitter Sustaining Voltage −  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
100 VOLTS, 15 WATTS  
V
= 100 Vdc (Min)  
CEO(sus)  
• High DC Current Gain @ I = 200 mAdc  
C
h
= 40−200  
= 40−120  
FE  
• Low Collector−Emitter Saturation Voltage −  
= 0.3 Vdc (Max) @ I = 500 mAdc  
V
CE(sat)  
C
• High Current Gain Bandwidth Product −  
f = 40 MHz (Min) @ I = 100 mAdc  
T
C
• Annular Construction for Low Leakages  
= 100 nAdc (Max) @ Rated V  
• Pb−Free Packages are Available*  
TO−225  
CASE 77  
STYLE 1  
I
CBO  
CB  
3
2
1
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
MARKING DIAGRAM  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
V
CEO  
V
100  
CB  
EB  
V
7.0  
YWW  
JE2x3G  
Collector Current − Continuous  
− Peak  
I
4.0  
8.0  
C
Base Current  
I
10  
Adc  
B
Total Power Dissipation @ T = 25_C  
P
P
15  
0.12  
W
C
D
D
Derate above 25_C  
mW/_C  
W
mW/_C  
_C  
Y
WW  
= Year  
= Work Week  
Total Power Dissipation @ T = 25_C  
1.5  
0.012  
C
Derate above 25_C  
JE2x3 = Device Code  
x = 4 or 5  
G
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
stg  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
ORDERING INFORMATION  
Symbol  
Max  
8.34  
83.4  
Unit  
_C/W  
_C/W  
Device  
Package  
Shipping  
Thermal Resistance, Junction−to−Case  
q
JC  
MJE243  
TO−225  
500 Units/Box  
500 Units/Box  
Thermal Resistance,  
Junction−to−Ambient  
q
JA  
TO−225  
MJE243G  
(Pb−Free)  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJE253  
TO−225  
500 Units/Box  
500 Units/Box  
TO−225  
(Pb−Free)  
MJE253G  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 11  
MJE243/D  
123456

中文翻译

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MJE253G 替代型号

型号 品牌 替代类型 描述 数据表
MJE253 ONSEMI

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