5秒后页面跳转
MJE243 PDF预览

MJE243

更新时间: 2024-11-01 22:33:07
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 238K
描述
POWER TRANSISTORS COMPLEMENTARY SILICON

MJE243 技术参数

是否无铅: 含铅生命周期:Obsolete
零件包装代码:SIP包装说明:PLASTIC, CASE 77-09, TO-225, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:1 week
风险等级:5.17Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:100 V
配置:Single最小直流电流增益 (hFE):40
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0端子数量:3
最高工作温度:140 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

MJE243 数据手册

 浏览型号MJE243的Datasheet PDF文件第2页浏览型号MJE243的Datasheet PDF文件第3页浏览型号MJE243的Datasheet PDF文件第4页浏览型号MJE243的Datasheet PDF文件第5页浏览型号MJE243的Datasheet PDF文件第6页 
Order this document  
by MJE243/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for low power audio amplifier and low–current, high–speed switching  
applications.  
High Collector–Emitter Sustaining Voltage —  
= 100 Vdc (Min) — MJE243, MJE253  
*Motorola Preferred Device  
V
CEO(sus)  
High DC Current Gain @ I = 200 mAdc  
C
4 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
h
h
= 40200  
FE  
FE  
= 40120 — MJE243, MJE253  
Low Collector–Emitter Saturation Voltage —  
V
= 0.3 Vdc (Max) @ I = 500 mAdc  
CE(sat)  
High Current Gain Bandwidth Product —  
= 40 MHz (Min) @ I = 100 mAdc  
C
100 VOLTS  
15 WATTS  
f
T
C
Annular Construction for Low Leakages  
I
= 100 nAdc (Max) @ Rated V  
CBO  
CB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
100  
7.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CB  
V
EB  
Collector Current — Continuous  
Peak  
I
C
4.0  
8.0  
CASE 77–08  
TO–225AA  
Base Current  
I
B
10  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
15  
0.12  
Watts  
W/ac  
Total Power Dissipation @ T = 25 C  
A
Derate @ 25 C  
P
D
1.5  
0.012  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.34  
83.4  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
θ
θ
JC  
JA  
16  
1.6  
1.2  
0.8  
0.4  
0
12  
8.0  
4.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995

MJE243 替代型号

型号 品牌 替代类型 描述 数据表
MJE243G ONSEMI

类似代替

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS
BD237 STMICROELECTRONICS

功能相似

COMPLEMENTARY SILICON POWER TRANSISTORS

与MJE243相关器件

型号 品牌 获取价格 描述 数据表
MJE243_06 ONSEMI

获取价格

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS
MJE243_09 ONSEMI

获取价格

Complementary Silicon Power Plastic Transistors
MJE243G ONSEMI

获取价格

Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS
MJE243LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
MJE243PBFREE CENTRAL

获取价格

暂无描述
MJE244 CENTRAL

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJE244 NJSEMI

获取价格

Trans GP BJT NPN 100V 4A 3-Pin TO-126
MJE244LEADFREE CENTRAL

获取价格

Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
MJE250 CENTRAL

获取价格

COMPLEMENTARY SILICON POWER TRANSISTORS
MJE250 MOTOROLA

获取价格

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plasti