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MJE244

更新时间: 2024-11-01 22:46:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管
页数 文件大小 规格书
1页 80K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

MJE244 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.31最大集电极电流 (IC):4 A
基于收集器的最大容量:50 pF集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
功耗环境最大值:1.5 W最大功率耗散 (Abs):15 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
VCEsat-Max:0.6 VBase Number Matches:1

MJE244 数据手册

  
145 Adams Avenue, Hauppauge, NY 11788 USA  
Tel: (631) 435-1110 • Fax: (631) 435-1824  

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