是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.31 | 最大集电极电流 (IC): | 4 A |
基于收集器的最大容量: | 50 pF | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
功耗环境最大值: | 1.5 W | 最大功率耗散 (Abs): | 15 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 2 MHz |
VCEsat-Max: | 0.6 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE244LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic | |
MJE250 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
MJE250 | MOTOROLA |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plasti | |
MJE250 | NJSEMI |
获取价格 |
Trans GP BJT PNP 80V 4A 3-Pin TO-126 | |
MJE251 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
MJE251 | NJSEMI |
获取价格 |
Trans GP BJT PNP 80V 4A 3-Pin TO-126 | |
MJE251LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/ | |
MJE251PBFREE | CENTRAL |
获取价格 |
暂无描述 | |
MJE252 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
MJE252 | NJSEMI |
获取价格 |
Trans GP BJT PNP 80V 4A 3-Pin TO-126 |