Datasheet > MJE243_06

MJE243_06

更新时间： 2024-11-02 04:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	90K
描述
Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

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中文翻译

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MJE243_06 数据手册

MJE243 − NPN,

MJE253 − PNP

Preferred Device

Complementary Silicon

Power Plastic Transistors

These devices are designed for low power audio amplifier and

low−current, high−speed switching applications.

http://onsemi.com

Features

4.0 AMPERES

• High Collector−Emitter Sustaining Voltage −

POWER TRANSISTORS

COMPLEMENTARY SILICON

100 VOLTS, 15 WATTS

= 100 Vdc (Min)

CEO(sus)

• High DC Current Gain @ I = 200 mAdc

= 40−200

= 40−120

• Low Collector−Emitter Saturation Voltage −

= 0.3 Vdc (Max) @ I = 500 mAdc

CE(sat)

• High Current Gain Bandwidth Product −

f = 40 MHz (Min) @ I = 100 mAdc

• Annular Construction for Low Leakages

= 100 nAdc (Max) @ Rated V

• Pb−Free Packages are Available*

TO−225

CASE 77

STYLE 1

CBO

MAXIMUM RATINGS

Rating

Symbol

Value

100

Unit

Vdc

Adc

MARKING DIAGRAM

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

CEO

100

7.0

YWW

JE2x3G

Collector Current − Continuous

− Peak

4.0

8.0

Base Current

Adc

Total Power Dissipation @ T = 25_C

0.12

Derate above 25_C

mW/_C

= Year

= Work Week

Total Power Dissipation @ T = 25_C

1.5

0.012

Derate above 25_C

JE2x3 = Device Code

x = 4 or 5

Operating and Storage Junction

Temperature Range

T , T

–65 to +150

stg

= Pb−Free Package

THERMAL CHARACTERISTICS

Characteristic

ORDERING INFORMATION

Symbol

Max

8.34

83.4

Unit

_C/W

Device

Package

Shipping

Thermal Resistance, Junction−to−Case

MJE243

TO−225

500 Units/Box

Thermal Resistance,

Junction−to−Ambient

TO−225

MJE243G

(Pb−Free)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MJE253

TO−225

500 Units/Box

TO−225

(Pb−Free)

MJE253G

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 11

MJE243/D

12 3 4 5 6

中文翻译

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与MJE243_06相关器件

型号	品牌	获取价格	描述	数据表
MJE243_09	ONSEMI	获取价格	Complementary Silicon Power Plastic Transistors
MJE243G	ONSEMI	获取价格	Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS
MJE243LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
MJE243PBFREE	CENTRAL	获取价格	暂无描述
MJE244	CENTRAL	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
MJE244	NJSEMI	获取价格	Trans GP BJT NPN 100V 4A 3-Pin TO-126
MJE244LEADFREE	CENTRAL	获取价格	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
MJE250	CENTRAL	获取价格	COMPLEMENTARY SILICON POWER TRANSISTORS
MJE250	MOTOROLA	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plasti
MJE250	NJSEMI	获取价格	Trans GP BJT PNP 80V 4A 3-Pin TO-126

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