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MJE243

更新时间： 2024-11-01 22:33:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率双极晶体管
页数 文件大小 规格书
6页 238K
描述
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS 15 WATTS

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中文翻译

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MJE243 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownHTS代码：8541.29.00.75
风险等级：5.19Is Samacsys：N
最大集电极电流 (IC)：4 A基于收集器的最大容量：50 pF
集电极-发射极最大电压：100 V配置：SINGLE
最小直流电流增益 (hFE)：15JEDEC-95代码：TO-225AA
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：NPN功耗环境最大值：15 W
最大功率耗散 (Abs)：1.5 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：40 MHz
VCEsat-Max：0.6 VBase Number Matches：1

MJE243 数据手册

 浏览型号MJE243的Datasheet PDF文件第2页浏览型号MJE243的Datasheet PDF文件第3页浏览型号MJE243的Datasheet PDF文件第4页浏览型号MJE243的Datasheet PDF文件第5页浏览型号MJE243的Datasheet PDF文件第6页 
Order this document  
by MJE243/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for low power audio amplifier and low–current, high–speed switching  
applications.  
•
High Collector–Emitter Sustaining Voltage —  
= 100 Vdc (Min) — MJE243, MJE253  
*Motorola Preferred Device  
V
CEO(sus)  
High DC Current Gain @ I = 200 mAdc  
•
C
4 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
h
h
= 40–200  
FE  
FE  
= 40–120 — MJE243, MJE253  
Low Collector–Emitter Saturation Voltage —  
•
•
•
V
= 0.3 Vdc (Max) @ I = 500 mAdc  
CE(sat)  
High Current Gain Bandwidth Product —  
= 40 MHz (Min) @ I = 100 mAdc  
C
100 VOLTS  
15 WATTS  
f
T
C
Annular Construction for Low Leakages  
I
= 100 nAdc (Max) @ Rated V  
CBO  
CB  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
100  
100  
7.0  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CB  
V
EB  
Collector Current — Continuous  
Peak  
I
C
4.0  
8.0  
CASE 77–08  
TO–225AA  
Base Current  
I
B
10  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
15  
0.12  
Watts  
W/ac  
Total Power Dissipation @ T = 25 C  
A
Derate @ 25 C  
P
D
1.5  
0.012  
Watts  
W/ C  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
8.34  
83.4  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
θ
θ
JC  
JA  
16  
1.6  
1.2  
0.8  
0.4  
0
12  
8.0  
4.0  
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 7  
Motorola, Inc. 1995
123456

中文翻译

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MJE243 替代型号

型号 品牌 替代类型 描述 数据表
MJE243LEADFREE CENTRAL

功能相似

 Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
MJE243G ONSEMI

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 Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS

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MJE243G ONSEMI

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 		Complementary Silicon Power Plastic Transistors 100 VOLTS, 15 WATTS
MJE243LEADFREE CENTRAL

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 		Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
MJE243PBFREE CENTRAL

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 		暂无描述
MJE244 CENTRAL

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 		COMPLEMENTARY SILICON POWER TRANSISTORS
MJE244 NJSEMI

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 		Trans GP BJT NPN 100V 4A 3-Pin TO-126
MJE244LEADFREE CENTRAL

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 		Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
MJE250 CENTRAL

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 		COMPLEMENTARY SILICON POWER TRANSISTORS
MJE250 MOTOROLA

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 		Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-225AA, Plasti

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