是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.26 | Is Samacsys: | N |
最大集电极电流 (IC): | 4 A | 集电极-发射极最大电压: | 80 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 15 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子面层: | MATTE TIN (315) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 2 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MJE240PBFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, | |
MJE240TIN/LEAD | CENTRAL |
获取价格 |
Power Bipolar Transistor, | |
MJE241 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
MJE241 | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 4A 3-Pin TO-126 | |
MJE241LEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/ | |
MJE241TIN/LEAD | CENTRAL |
获取价格 |
Power Bipolar Transistor, | |
MJE242 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS | |
MJE242 | NJSEMI |
获取价格 |
Trans GP BJT NPN 80V 4A 3-Pin TO-126 | |
MJE243 | ISC |
获取价格 |
isc Silicon NPN Power Transistor | |
MJE243 | CENTRAL |
获取价格 |
COMPLEMENTARY SILICON POWER TRANSISTORS |