MJE243

更新时间： 2024-11-21 12:47:23

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	102K
描述
isc Silicon NPN Power Transistor

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技术参数
数据手册

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MJE243 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.55
Is Samacsys：	N	Base Number Matches：	1

MJE243 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJE243

DESCRIPTION

·Collector–Emitter Sustaining Voltage-

: V_CEO(SUS)= 100 V(Min)

·DC Current Gain-

: h_FE= 40(Min) @ I_C= 0.2 A

·Low Collector Saturation Voltage-

: V_CE(sat)= 0.3V(Max.)@ I_C= 0.5 A

·Complement to Type MJE253

APPLICATIONS

·Designed for low power audio amplifier and low-current,

high-speed switching applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current

VALUE

UNIT

100

I_CM

I_B

Collector Power Dissipation

T_a=25℃

1.5

P_C

Collector Power Dissipation

T_C=25℃

Junction Temperature

150

-65~150

℃

T_i

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

8.34

83.4

R_{th j-c}

R_{th j-a}

isc Website：www.iscsemi.cn

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