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MJE243 PDF预览

MJE243

更新时间: 2024-11-20 21:53:55
品牌 Logo 应用领域
CENTRAL 晶体晶体管功率双极晶体管
页数 文件大小 规格书
1页 80K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

MJE243 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.2Is Samacsys:N
最大集电极电流 (IC):4 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:140 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):1.5 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):2 MHz
Base Number Matches:1

MJE243 数据手册

  
145 Adams Avenue, Hauppauge, NY 11788 USA  
Tel: (631) 435-1110 • Fax: (631) 435-1824  

MJE243 替代型号

型号 品牌 替代类型 描述 数据表
MJE243LEADFREE CENTRAL

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Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic
MJE243G ONSEMI

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