是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 2.26 |
其他特性: | ALSO AVAILABLE WITH -15V OUPUT OR SINGLE 30V OUTPUT | 模拟集成电路 - 其他类型: | DC-DC REGULATED POWER SUPPLY MODULE |
最大输入电压: | 36 V | 最小输入电压: | 9 V |
标称输入电压: | 24 V | JESD-30 代码: | R-XDMA-P6 |
长度: | 50.8 mm | 功能数量: | 1 |
输出次数: | 2 | 端子数量: | 6 |
最大输出电压: | 15.505 V | 最小输出电压: | 14.602 V |
标称输出电压: | 15 V | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度): | NOT SPECIFIED | 座面最大高度: | 10.4 mm |
表面贴装: | NO | 技术: | HYBRID |
端子形式: | PIN/PEG | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 最大总功率输出: | 30 W |
微调/可调输出: | NO | 宽度: | 25.4 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFW302415-R | COSEL |
获取价格 |
DC-DC Regulated Power Supply Module | |
MGFW304812 | COSEL |
获取价格 |
DC-DC Regulated Power Supply Module, | |
MGFX35V0005 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERME | |
MGFX35V0510 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERME | |
MGFX35V0510-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX35V0510-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX35V1722 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERM | |
MGFX35V1722-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGFX35V9095 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERME | |
MGFX35V9095-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |