生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.84 | 最大漏极电流 (Abs) (ID): | 5.6 A |
最大漏极电流 (ID): | 5.6 A | FET 技术: | JUNCTION |
最高频带: | X BAND | JESD-30 代码: | R-CDFM-F2 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 43 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFX38V0510-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX38V0510-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX38V1722 | MITSUBISHI |
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RF Power Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERM | |
MGFX38V1722-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio | |
MGFX38V1722-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX38V9095 | MITSUBISHI |
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RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERME | |
MGFX38V9095-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX38V9095-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX38V9500-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX38V9500-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |