Datasheet > MGFX39V0717_11

MGFX39V0717_11

更新时间： 2024-09-14 12:20:23

品牌	Logo	应用领域
三菱 - MITSUBISHI		/
页数	文件大小	规格书
3页	132K
描述
10.7-11.7 GHz BAND / 8W

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MGFX39V0717_11 数据手册

< X/Ku band internally matched power GaAs FET >

MGFX39V0717

10.7 – 11.7 GHz BAND / 8W

DESCRIPTION

The MGFX39V0717 is an internally impedance-matched

GaAs power FET especially designed for use in 10.7 – 11.7

GHz band amplifiers. The hermetically sealed metal-ceramic

package guarantees high reliability.

FEATURES

Internally impedance matched

 High output power

P1dB=8.0W (TYP.) @f=10.7 – 11.7GHz

 High linear power gain

GLP=7.0dB (TYP.) @f=10.7 – 11.7GHz

 High power added efficiency

P.A.E.=26% (TYP.) @f=10.7 – 11.7GHz

APPLICATION

 For use in 10.7 – 11.7 GHz band power amplifiers

QUALITY

 IG

RECOMMENDED BIAS CONDITIONS

 VDS=10V  ID=2.4A Refer to Bias Procedure

Absolute maximum ratings (Ta=25C)

Keep Safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum

effort into making semiconductor products better

and more reliable , but there is always the

possibility that trouble may occur with them.

Trouble with semiconductors may lead to personal

injury , fire or property damage. Remember to give

due consideration to safety when making your

circuit designs , with appropriate measure such

as (I) placement of substitutive , auxiliary circuits ,

(ii) use of non-flammable material or (iii) prevention

against any malfunction or mishap.

Symbol

Parameter

Ratings

Unit

Gate to drain

VGDO

breakdown voltage

-15

VGSO Gate to source breakdown voltage

-15

Drain current

5.6

IGR

IGF

PT *1

Tch

Reverse gate current

Forward gate current

Total power dissipation

Cannel temperature

Storage temperature

-18

42.8

175

C

Tstg

-65 to +175

*1 : Tc=25C

Electrical characteristics

(Ta=25C)

Symbol

Parameter

Test conditions

Limits

Unit

Min.

Typ.

Max.

Saturated drain current

Transconductance

VDS=3V,VGS=0V

5.6

IDSS

VDS=3V,ID=2.2A

VDS=3V,ID=20mA

-4

Gate to source cut-off voltage

-2

-3

VGS(off)

P1dB

Output power at 1dB gain compression VDS=10V,ID(RF off)=2.4A

37.5

dBm

f=10.7 – 11.7GHz

GLP

Linear Power Gain

Power added efficiency

Thermal resistance

P.A.E.

Rth(ch-c) *2

3.5

C/W

*2 :Channel-case

Publication Date : Apr., 2011

12 3

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