5秒后页面跳转
MGFX38V1722 PDF预览

MGFX38V1722

更新时间: 2024-09-09 19:03:43
品牌 Logo 应用领域
三菱 - MITSUBISHI 局域网放大器晶体管
页数 文件大小 规格书
1页 163K
描述
RF Power Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED PACKAGE-2

MGFX38V1722 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-CDFM-F2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.84最大漏极电流 (Abs) (ID):5.6 A
最大漏极电流 (ID):5.6 AFET 技术:JUNCTION
最高频带:KU BANDJESD-30 代码:R-CDFM-F2
端子数量:2工作模式:DEPLETION MODE
最高工作温度:175 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:43 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

MGFX38V1722 数据手册

  

与MGFX38V1722相关器件

型号 品牌 获取价格 描述 数据表
MGFX38V1722-01 MITSUBISHI

获取价格

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio
MGFX38V1722-51 MITSUBISHI

获取价格

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction
MGFX38V9095 MITSUBISHI

获取价格

RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERME
MGFX38V9095-01 MITSUBISHI

获取价格

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction
MGFX38V9095-51 MITSUBISHI

获取价格

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction
MGFX38V9500-01 MITSUBISHI

获取价格

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction
MGFX38V9500-51 MITSUBISHI

获取价格

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction
MGFX39V0717 MITSUBISHI

获取价格

10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET
MGFX39V0717_11 MITSUBISHI

获取价格

10.7-11.7 GHz BAND / 8W
MGFX39V0717-01 MITSUBISHI

获取价格

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction