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| 品牌 | Logo | 应用领域 |
| 三菱 - MITSUBISHI |  |
/ |
| 页数 | 文件大小 | 规格书 |
| 2页 | 95K |  |
| 描述 | ||
| 10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET | ||
| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| MGFX36V0717_11 | MITSUBISHI |
获取价格 |
10.7-11.7 GHz BAND / 4W |
|
| MGFX36V0717-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFX38V0005 | MITSUBISHI |
获取价格 |
Transistor |
|
| MGFX38V0510 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERME |
|
| MGFX38V0510-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFX38V0510-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFX38V1722 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERM |
|
| MGFX38V1722-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junctio |
|
| MGFX38V1722-51 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |
|
| MGFX38V9095 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERME |
|
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