生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.84 | 外壳连接: | SOURCE |
配置: | SINGLE | 最大漏极电流 (ID): | 2.8 A |
FET 技术: | JUNCTION | 最高频带: | X BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | DEPLETION MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 27.2 W |
最小功率增益 (Gp): | 7.5 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MGFX35V9095-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX35V9500 | MITSUBISHI |
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RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERME | |
MGFX35V9500-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX35V9500-51 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX36V0717 | MITSUBISHI |
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10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET | |
MGFX36V0717_11 | MITSUBISHI |
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10.7-11.7 GHz BAND / 4W | |
MGFX36V0717-01 | MITSUBISHI |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction | |
MGFX38V0005 | MITSUBISHI |
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Transistor | |
MGFX38V0510 | MITSUBISHI |
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RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET, HERME | |
MGFX38V0510-01 | MITSUBISHI |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction |