LTO-DMS Semiconductor Corporation
1468, 86th Street, Brooklyn,
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
LTO-DMS
MDD310-08V thru MDD310-22V
Diode/Diode Module
3
2
VRSM
VRRM
Type
V
V
3
1
2
900
800
MDD310-08V
MDD310-12V
MDD310-14V
MDD310-16V
MDD310-18V
MDD310-20V
MDD310-22V
1
1300
1500
1700
1900
2100
2300
1200
1400
1600
1800
2000
2200
Symbol Test Conditions
Maximum Ratings Features
·Package with screw terminals
·Isolation Voltage 3600V-
·Planar glasspassivated chips
·Low forward voltage drop
IFRM
TVJ=TVJM
TC=100
480
310
A
A
A
A
IFAVM
180 sine
IFSM
TVJ=45
VR=0
t=10
t=8.3 ms
ms
(50Hz),sine
(60Hz),sine
11500
12200
TVJ=TVJM
VR=0
TVJ=45
VR=0
TVJ=TVJM
VR=0
t=10
t=8.3 ms
t=10 ms
t=8.3 ms
t=10 ms
t=8.3 ms
ms
(50Hz),sine
(60Hz),sine
(50Hz),sine
(60Hz),sine
(50Hz),sine
(60Hz),sine
9600
10200
662000
620000
460000
430000
+150
150
+150
3000
3600
2.5-5
12-15
320
A
A
Applications
·Heat and temperature control for
industrial fumaces and chemical
processes
·Lighting control
·Motor control
i2dt
A2S
A2S
A2S
A2S
TVJ
TVJM
Tstg
-40
-40
·Power converter
Advantages
·Easy to mount with two screws
·Space and weight savings
·Improved temperature and
power cycling
VISOL
50/60Hz,RMS t=1min
IISOL 1mA t=1s
Mounting Torque
Terminal connection torque
Typ.
V
V
Md
(M5)
(M8)
Nm
Nm
g
·High power density
Weight
Dimensions in mm (1 mm = 0.0394")
Symbol
Test Conditions
Characteristic Value
IR
VR=VRRM
IF=600A
TVJ=TVJM
TVJ=25
40
mA
V
VF
1.2
VTO
rT
For power-loss calculations only
TVJ=TVJM
0.75
0.63
V
m
QS
IRM
TVJ=125 ,IF=400A,-di/dt=50A/
s
760
275
C
A
RthJC
RthJK
per Diode;DC current
per module
per Diode;DC current
per module
Creeping distance on surface
Creeping distance in air
Max.allowable acceleration
0.129
0.065
0.169
0.0845
12.7
K/W
K/W
K/W
K/W
mm
mm
m/s2
ds
dA
a
9.6
50
Revision:1
2002/06/17