Datasheet > MDD06N100

MDD06N100

更新时间： 2024-10-30 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	958K
描述
Single N-channel Trench MOSFET 60V, 50A, 10m(ohm)

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MDD06N100 数据手册

MDD06N100

Single N-channel Trench MOSFET 60V, 50A, 10mΩ

ㄹ

General Description

Features

The MDD06N100 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDD06N100 is suitable device for Synchronous

Rectification For Server and general purpose applications.



V_DS= 60V

I_D= 50A @V_GS= 10V

R_DS(ON)

< 10.0 mΩ @V_GS= 10V

100% UIL Tested



Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

Gate-Source Voltage

V_GSS

±20

T_C=25^oC (Silicon Limited)

T_C=25^oC (Package Limited)

T_C=100^oC

Continuous Drain Current ⁽¹⁾

I_D

Pulsed Drain Current

I_DM

200

T_C=25^oC

Power Dissipation

P_D

T_C=100^oC

Single Pulse Avalanche Energy ⁽²⁾

E_AS

84.5

-55~150

^oC

Junction and Storage Temperature Range

T_J, T_stg

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

Unit

^oC/W

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

R_θJC

2.1

Apr. 2015. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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