Datasheet > MDD14N25C

MDD14N25C

更新时间： 2024-10-30 01:22:59

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美格纳 - MGCHIP		/
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描述
N-Channel MOSFET 250V, 10.2A, 0.28(ohm)

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MDD14N25C 数据手册

MDD14N25C

N-Channel MOSFET 250V, 10.2A, 0.28Ω

General Description

Features

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.



V_DS= 250V

I_D= 10.2A

R_DS(ON)≤ 0.28Ω

@ V_GS= 10V

Applications

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.



Power Supply

Motor Control

High Current, High Speed Switching

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

250

Unit

Gate-Source Voltage

V_GSS

±30

T_C=25^oC

T_C=100^oC

10.2

6.4

Continuous Drain Current

I_D

Pulsed Drain Current⁽¹⁾

I_DM

P_D

40.8

69.4

0.56

4.5

T_C=25^oC

Derivate above 25 ^oC

Power Dissipation

W/ ^oC

V/ns

Peak Diode Recovery dv/dt⁽³⁾

Repetitive Avalanche Energy⁽¹⁾

Avalanche current⁽¹⁾

dv/dt

E_AR

6.94

10.2

550

I_AR

Single Pulse Avalanche Energy⁽⁴⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

110

Unit

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

^oC/W

R_θJC

1.8

Nov. 2011 Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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