Datasheet > MDD1752

MDD1752

更新时间： 2024-10-30 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
7页	1081K
描述
N-Channel Trench MOSFET 40V, 50A, 8.0m(ohm)

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MDD1752 数据手册

MDD1752

N-Channel Trench MOSFET 40V, 50A, 8.0mΩ

General Description

Features

The MDD1752 uses advanced MagnaChip’s trench

MOSFET Technology to provide high performance in on-

state resistance, switching performance and reliability



V_DS= 40V

I_D= 50A @V_GS= 10V

R_DS(ON)

< 8.0mΩ @ V_GS= 10V

< 10.5mΩ@ V_GS= 4.5V

Low R_DS(ON), low gate charge can be offering superior

benefit in the application.

Applications



Inverters

General purpose applications

Absolute Maximum Ratings (T_C=25^oC unless otherwise noted)

Characteristics

Symbol

V_DSS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

T_C=25^oC

T_A=25^oC (b)

(a)

Continuous Drain Current

Pulsed Drain Current

(Note 2)

I_D

15.2

100

I_DM

P_D

T_C=25^oC

T_A=25^oC

(Note 3)

Power Dissipation for Single Operation

3.1

Single Pulse Avalanche Energy

E_AS

153

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~+150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

Unit

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1)

^oC/W

R_θJC

2.8

Jun. 2015. Version 1.3

MagnaChip Semiconductor Ltd.

12 3 4 5 6 7

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