Datasheet > MDD1901RH

MDD1901RH

更新时间： 2024-09-14 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	867K
描述
Single N-channel Trench MOSFET 100V, 40A, 22m(ohm)

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MDD1901RH 数据手册

MDD1901

Single N-channel Trench MOSFET 100V, 40A, 22mΩ

General Description

Features

The MDD1901 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDD1901 is suitable device for DC/DC

Converters and general purpose applications.



V_DS= 100V

I_D= 40A @V_GS= 10V

R_DS(ON)

< 22mΩ @V_GS= 10V

< 25mΩ @V_GS= 6.0V

Absolute Maximum Ratings (Tc = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

100

±20

Unit

Gate-Source Voltage

V_GSS

T_C=25^oC

T_C=100^oC

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

I_DM

T_C=25^oC

T_C=100^oC

P_D

Single Pulse Avalanche Energy ⁽²⁾

E_AS

200

-55~150

^oC

Junction and Storage Temperature Range

T_J, T_stg

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case ⁽¹⁾

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

1.8

August. 2010. Version 1.2

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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