Datasheet > MDD1903RH

MDD1903RH

更新时间： 2024-09-14 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	825K
描述
Single N-channel Trench MOSFET 100V, 12.8A, 105m(ohm)

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MDD1903RH 数据手册

MDD1903

Single N-channel Trench MOSFET 100V, 12.8A, 105mΩ

ㄹ

General Description

Features

The MDD1903 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDD1903 is suitable device for DC to DC

converter and general purpose applications.



V_DS= 100V

I_D= 12.8A @V_GS= 10V

R_{DS(ON) (MAX)}

< 105mΩ @V_GS= 10V

< 110mΩ @V_GS= 6.0V

Absolute Maximum Ratings (Tc = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

100

±20

Gate-Source Voltage

V_GSS

T_C=25^oC

T_C=70^oC

12.8

10.3

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

I_DM

P_D

T_C=25^oC

T_C=70^oC

36.8

23.6

Single Pulse Avalanche Energy ⁽²⁾

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

3.4

Jun. 2011. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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