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MDD175-28N1 PDF预览

MDD175-28N1

更新时间: 2024-10-29 19:56:39
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网高功率电源二极管
页数 文件大小 规格书
5页 196K
描述
Rectifier Diode, 1 Phase, 2 Element, 175A, 2800V V(RRM), Silicon, MODULE-3

MDD175-28N1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:MODULE-3Reach Compliance Code:compliant
风险等级:5.74其他特性:UL RECOGNIZED
应用:HIGH POWER外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JESD-30 代码:R-XUFM-X3JESD-609代码:e3
最大非重复峰值正向电流:4300 A元件数量:2
相数:1端子数量:3
最高工作温度:140 °C最低工作温度:-40 °C
最大输出电流:175 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:2800 V子类别:Rectifier Diodes
表面贴装:NO端子面层:Tin (Sn) - with Nickel (Ni) barrier
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MDD175-28N1 数据手册

 浏览型号MDD175-28N1的Datasheet PDF文件第2页浏览型号MDD175-28N1的Datasheet PDF文件第3页浏览型号MDD175-28N1的Datasheet PDF文件第4页浏览型号MDD175-28N1的Datasheet PDF文件第5页 
MDD175-28N1  
=
VRRM  
IFAV  
VF  
2x2800V  
240A  
High Voltage Standard Rectifier Module  
=
=
1.01V  
Phase leg  
Part number  
MDD175-28N1  
Backside: isolated  
2
1
3
Y1  
Features / Advantages:  
Applications:  
Package:  
Planar passivated chips  
Diode for main rectification  
For single and three phase  
bridge configurations  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Field supply for DC motors  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
Base plate: Copper  
internally DCB isolated  
Advanced power cycling  
V~  
4800  
Very low leakage current  
Very low forward voltage drop  
Improved thermal behaviour  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191204i  
© 2019 IXYS all rights reserved  

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