Datasheet > MDD1951

MDD1951

更新时间： 2024-09-16 01:23:07

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	929K
描述
Single N-Channel Trench MOSFET 60V, 17.9A, 45.0m(ohm)

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MDD1951 数据手册

MDD1951

Single N-Channel Trench MOSFET 60V, 17.9A, 45.0mΩ

General Description

Features

The MDD1951 uses advanced MagnaChip’s trench

MOSFET Technology to provide high performance in on-

state resistance, switching performance and reliability

Low R_DS(ON), low gate charge can be offering superior

benefit in the application.



V_DS= 60V

I_D= 17.9A @V_GS= 10V

R_DS(ON)

< 45.0mΩ@ V_GS= 10V

< 55.0mΩ@ V_GS= 4.5V

Applications



Inverters

General purpose applications

Absolute Maximum Ratings (T_C=25^oC unless otherwise noted)

Characteristics

Symbol

V_DSS

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GSS

±20

T_C=25^oC

T_A=25^oC (b)

(a)

17.9

4.4

Continuous Drain Current

Pulsed Drain Current

(Note 2)

I_D

I_DM

P_D

T_C=25^oC

T_A=25^oC

(Note 3)

32.8

2.0

Power Dissipation for Single Operation

Single Pulse Avalanche Energy

E_AS

^oC

Junction and Storage Temperature Range

T_J, T_stg

-55~+150

Thermal Characteristics

Characteristics

Symbol

R_θJA

Rating

Unit

Thermal Resistance, Junction-to-Ambient(Steady-State)

Thermal Resistance, Junction-to-Case

(Note 1)

^oC/W

R_θJC

3.8

December 2009. Version 1.1

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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