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MDD255-12N1 PDF预览

MDD255-12N1

更新时间: 2024-11-06 14:56:35
品牌 Logo 应用领域
力特 - LITTELFUSE 二极管
页数 文件大小 规格书
6页 164K
描述
双二极管模块产品组合提供多种封装,击穿电压高达2200V。

MDD255-12N1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-XUFM-X3Reach Compliance Code:compliant
风险等级:5.65Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JESD-30 代码:R-XUFM-X3最大非重复峰值正向电流:9500 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:270 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:1200 V
子类别:Rectifier Diodes表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MDD255-12N1 数据手册

 浏览型号MDD255-12N1的Datasheet PDF文件第2页浏览型号MDD255-12N1的Datasheet PDF文件第3页浏览型号MDD255-12N1的Datasheet PDF文件第4页浏览型号MDD255-12N1的Datasheet PDF文件第5页浏览型号MDD255-12N1的Datasheet PDF文件第6页 
MDD255-12N1  
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=
=
VRRM  
IFAV  
VF  
2x1200V  
270A  
Standard Rectifier Module  
1,08V  
Phase leg  
Part number  
MDD255-12N1  
Backside: isolated  
2
1
3
Y1  
Features / Advantages:  
Applications:  
Package:  
Package with DCB ceramic  
Improved temperature and power cycling  
Planar passivated chips  
Diode for main rectification  
For single and three phase  
bridge configurations  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
V~  
4800  
Very low forward voltage drop  
Very low leakage current  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Field supply for DC motors  
Height: 30 mm  
Base plate: DCB ceramic  
Reduced weight  
Advanced power cycling  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20220914k  
© 2022 IXYS all rights reserved  

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