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MDD250-08N1 PDF预览

MDD250-08N1

更新时间: 2024-11-19 22:41:07
品牌 Logo 应用领域
IXYS 整流二极管局域网
页数 文件大小 规格书
3页 118K
描述
High Power Diode Modules

MDD250-08N1 技术参数

是否无铅:不含铅生命周期:Transferred
包装说明:R-XUFM-X3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.75Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JESD-30 代码:R-XUFM-X3最大非重复峰值正向电流:11000 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:290 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:800 V子类别:Rectifier Diodes
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MDD250-08N1 数据手册

 浏览型号MDD250-08N1的Datasheet PDF文件第2页浏览型号MDD250-08N1的Datasheet PDF文件第3页 
MDD 250  
IFRMS = 2x 450 A  
IFAVM = 2x 290 A  
VRRM = 800-1600 V  
High Power  
Diode Modules  
3
3
1
2
2
VRSM  
V
VRRM  
V
Type  
1
900  
1300  
1500  
1700  
800  
1200  
1400  
1600  
MDD 250-08N1  
MDD 250-12N1  
MDD 250-14N1  
MDD 250-16N1  
Symbol  
Test Conditions  
Maximum Ratings  
Features  
Direct copper bonded Al2O3 -ceramic  
base plate  
Planar passivated chips  
Isolation voltage 3600 V~  
IFRMS  
IFAVM  
TVJ = TVJM  
TC = 100°C; 180° sine  
450  
290  
A
A
IFSM  
TVJ = 45°C;  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
11 000  
11 700  
A
A
UL registered, E 72873  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
9000  
9600  
A
A
Applications  
Supplies for DC power equipment  
DC supply for PWM inverter  
Field supply for DC motors  
òi2dt  
TVJ = 45°C  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
605 000  
560 000  
A2s  
A2s  
TVJ = TVJM  
VR = 0  
t = 10 ms (50 Hz), sine  
t = 8.3 ms (60 Hz), sine  
405 000  
380 000  
A2s  
A2s  
Battery DC power supplies  
Advantages  
Space and weight savings  
Simple mounting  
Improved temperature and power  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+125  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1 min  
t = 1 s  
3000  
3600  
V~  
V~  
cycling  
Reduced protection circuits  
IISOL £ 1 mA  
Md  
Mounting torque (M5)  
2.5-5/22-44 Nm/lb.in.  
Terminal connection torque (M8)  
12-15/106-132 Nm/lb.in.  
Dimensions in mm (1 mm = 0.0394")  
Weight  
Typical including screws  
320  
g
Symbol  
IRRM  
Test Conditions  
Characteristic Values  
TVJ = TVJM; VR = VRRM  
40 mA  
VF  
IF = 600 A; TVJ = 25°C  
1.3  
V
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
0.75  
0.75 mW  
V
RthJC  
per diode; DC current  
per module  
per diode; DC current  
per module  
0.129 K/W  
0.065 K/W  
0.169 K/W  
0.0845 K/W  
other values  
see Fig. 6/7  
RthJK  
QS  
IRM  
TVJ = 125°C, IF = 400 A; -di/dt = 50 A/ms  
760  
275  
mC  
A
20  
12  
dS  
dA  
a
Creepage distance on surface  
Strike distance through air  
Maximum allowable acceleration  
12.7 mm  
9.6 mm  
50 m/s2  
14  
Data according to IEC 60747 and refer to a single diode unless otherwise stated.  
IXYS reserves the right to change limits, test conditions and dimensions  
Threaded spacer for higher Anode/Cathode  
construction: Type ZY 250, material brass  
© 2000 IXYS All rights reserved  
1 - 3  

MDD250-08N1 替代型号

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