Datasheet > MDD2300

MDD2300

更新时间： 2024-11-18 18:10:07

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
5页	3333K
描述
SOT-23

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中文翻译

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数据手册

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MDD2300 数据手册

MDD2300

20V N-Channel Enhancement Mode MOSFET

SOT-23

I_{D Max}

V_(BR)DSS

R_DS(on)Typ

1. Gate

@4.5V

19.4mΩ

2. Source

20V

6.2A

3. Drain

21.5mΩ 2.5V

Features

Application

Load Switch

DC/DC Converter

Switching Circuits

Power Management

Advanced trench process technology

High Density Cell Design For Ultra Low On-Resistance

Marking

Equivalent Circuit

XXX:Date Code

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

I_D

±12

6.2

Pulsed Drain Current (Note 1)

I_DM

24.8

Power Dissipation(Note 2)

P_D

1.56

Thermal Resistance from Junction to Ambient(Note 2)

Junction Temperature and Storage Temperature

R_θJA

℃/W

℃

TJ,T_stg

-50 ~150

Notes: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional

operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1 / 5

V 1.0

12 3 4 5

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