Datasheet > MDD1501RH

MDD1501RH

更新时间： 2024-10-30 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1026K
描述
Single N-channel Trench MOSFET 30V, 67.4A, 5.6m(ohm)

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MDD1501RH 数据手册

MDD1501

Single N-channel Trench MOSFET 30V, 67.4A, 5.6mΩ

General Description

Features

The MDD1501 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDD1501 is suitable device for DC to DC

converter and general purpose applications.



V_DS= 30V

I_D= 67.4A @V_GS= 10V

R_{DS(ON) (MAX)}

< 5.6mΩ @V_GS= 10V

< 8.6mΩ @V_GS= 4.5V

100% UIL Tested

100% Rg Tested



Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

Gate-Source Voltage

V_GSS

±20

T_C=25^oC

T_C=70^oC

T_A=25^oC

T_A=70^oC

67.4

53.9

Continuous Drain Current ⁽¹⁾

Pulsed Drain Current

Power Dissipation

I_D

25.1⁽³⁾

20.2⁽³⁾

270

I_DM

T_C=25^oC

T_C=70^oC

T_A=25^oC

T_A=70^oC

44.6

28.5

P_D

6.2⁽³⁾

4.0⁽³⁾

Single Pulse Avalanche Energy ⁽²⁾

E_AS

Junction and Storage Temperature Range

T_J, T_stg

-55~150

^oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

20.0

Unit

^oC/W

R_θJC

2.8

Oct. 2015. Version 1.4

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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