5秒后页面跳转
MDD172-14N1 PDF预览

MDD172-14N1

更新时间: 2024-10-30 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网二极管
页数 文件大小 规格书
6页 214K
描述
双二极管模块产品组合提供多种封装,击穿电压高达2200V。

MDD172-14N1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-XUFM-X3Reach Compliance Code:compliant
风险等级:5.75Is Samacsys:N
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.15 V
JESD-30 代码:R-XUFM-X3最大非重复峰值正向电流:6600 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最大输出电流:190 A封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1400 V子类别:Rectifier Diodes
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MDD172-14N1 数据手册

 浏览型号MDD172-14N1的Datasheet PDF文件第2页浏览型号MDD172-14N1的Datasheet PDF文件第3页浏览型号MDD172-14N1的Datasheet PDF文件第4页浏览型号MDD172-14N1的Datasheet PDF文件第5页浏览型号MDD172-14N1的Datasheet PDF文件第6页 
MDD172-14N1  
=
VRRM  
IFAV  
VF  
2x1400V  
190A  
Standard Rectifier Module  
=
=
0.96V  
Phase leg  
Part number  
MDD172-14N1  
Backside: isolated  
2
1
3
Y4  
Features / Advantages:  
Applications:  
Package:  
Package with DCB ceramic  
Improved temperature and power cycling  
Planar passivated chips  
Diode for main rectification  
For single and three phase  
bridge configurations  
Isolation Voltage:  
Industry standard outline  
RoHS compliant  
V~  
3600  
Very low forward voltage drop  
Very low leakage current  
Supplies for DC power equipment  
Input rectifiers for PWM inverter  
Battery DC power supplies  
Field supply for DC motors  
Soldering pins for PCB mounting  
Base plate: DCB ceramic  
Reduced weight  
Advanced power cycling  
Disclaimer Notice  
Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
www.littelfuse.com/disclaimer-electronics.  
and may not be used in, all applications. Read complete Disclaimer Notice at  
IXYS reserves the right to change limits, conditions and dimensions.  
Data according to IEC 60747and per semiconductor unless otherwise specified  
20191204d  
© 2019 IXYS all rights reserved  

与MDD172-14N1相关器件

型号 品牌 获取价格 描述 数据表
MDD172-16N1 IXYS

获取价格

High Power Diode Modules
MDD172-16N1 LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD172-18N1 IXYS

获取价格

High Power Diode Modules
MDD172-18N1 LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。
MDD1752 MGCHIP

获取价格

N-Channel Trench MOSFET 40V, 50A, 8.0m(ohm)
MDD175-28N1 LITTELFUSE

获取价格

Rectifier Diode, 1 Phase, 2 Element, 175A, 2800V V(RRM), Silicon, MODULE-3
MDD175-28N1 IXYS

获取价格

Rectifier Diode, 1 Phase, 2 Element, 175A, 2800V V(RRM), Silicon, MODULE-3
MDD1752RH MGCHIP

获取价格

N-Channel Trench MOSFET 40V, 50A, 8.0m(ohm)
MDD175-34N1 IXYS

获取价格

Rectifier Diode, 1 Phase, 2 Element, 175A, 3400V V(RRM), Silicon, MODULE-3
MDD175-34N1 LITTELFUSE

获取价格

双二极管模块产品组合提供多种封装,击穿电压高达2200V。