Datasheet > MDD1051RH

MDD1051RH

更新时间： 2024-10-30 01:22:59

品牌	Logo	应用领域
美格纳 - MGCHIP		/
页数	文件大小	规格书
6页	1068K
描述
Single N-channel Trench MOSFET 150V, 28A, 46m(ohm)

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MDD1051RH 数据手册

MDD1051

Single N-channel Trench MOSFET 150V, 28A, 46mΩ

ㄹ

General Description

Features

The MDD1051 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDD1051 is suitable device for Synchronous

Rectification For Server and general purpose applications.



V_DS= 150V

I_D= 28A @V_GS= 10V

R_{DS(ON) (MAX)}

< 46.0mΩ @V_GS= 10V

100% UIL Tested

100% Rg Tested



Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

Unit

150

±20

Gate-Source Voltage

V_GSS

T_C=25^oC (Silicon Limited)

Continuous Drain Current ⁽¹⁾

T_C=100^oC

I_D

Pulsed Drain Current

I_DM

110

T_C=25^oC

Power Dissipation

P_D

T_C=100^oC

Single Pulse Avalanche Energy ⁽²⁾

E_AS

50.0

-55~150

^oC

Junction and Storage Temperature Range

T_J, T_stg

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient ⁽¹⁾

Thermal Resistance, Junction-to-Case

Symbol

R_θJA

Rating

Unit

^oC/W

R_θJC

1.8

Apr. 2014. Version 1.0

MagnaChip Semiconductor Ltd.

12 3 4 5 6

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