Datasheet > MDD12N65F

MDD12N65F

更新时间： 2024-10-30 18:08:55

品牌	Logo	应用领域
辰达行 - MDD		/
页数	文件大小	规格书
8页	2981K
描述
TO-220F

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中文翻译

获取价格

数据手册

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MDD12N65F 数据手册

MDD12N65F/MDD12N65P

650V N-Channel Enhancement Mode MOSFET

650 V

TO-220F-3L

TO-220-3L

V_DS

I_D(Tc=25℃)

12A

R_DS(on),max

Q_g,typ

0.8Ω@V_GS=10V

41.9nC

General Features



Ultra low gate charge

Low reverse transfer Capacitance

Fast switching capability

Avalanche energy tested

Improved dv/dt capability, high ruggedness

Equivalent Circuit

Application



High efeciency switch mode power supplies

Electronic lamp ballasts based on half bridge

LED power supplies

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

650

V_GS

I_D

±30

Pulsed Drain Current(Note 1)

I_DM

500

Avalanche Energy

Single Pulsed (Note 2)

E_AS

I_S

Continuous diode forward current

Diode pulse current

I_S,pulse

dv/dt

Peak Diode Recovery dv/dt (Note 3)

Power Dissipation TO-220F

Power Dissipation TO-220

V/ns

P_D

150

Junction Temperature

Storage Temperature

150

℃

T_J

T_stg

-55 ~150

℃

Thermal Characteristics

Value

Parameter

Symbol

Unit

TO-220F

TO-220

2.98

0.83

Thermal resistance, Junction-to-case

Thermal resistance, Junction-to-ambient

R_θJC

R_θJA

°C/W

110

62.5

Notes:

1. Pulse width limited by maximum junction temperature.

2. L=10mH, I

= 10A, Starting T = 25°C.

3. I

= 12A, di/dt≤100A/us, V ≤BV , Starting T = 25°C.

DD DS j

1 / 8

V 1.0

12 3 4 5 6 7 8

中文翻译

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