Datasheet > MCH3474

MCH3474

更新时间： 2024-09-14 02:57:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	521K
描述
Single N-Channel Power MOSFET

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中文翻译

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技术参数
数据手册

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MCH3474 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.66	配置：	Single
最大漏极电流 (Abs) (ID)：	4 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

MCH3474 数据手册

MCH3474

Power MOSFET

30V, 50mΩ, 4A, Single N-Channel

This Power MOSFET is produced using ON Semiconductor’s trench

technology, which is specifically designed to minimize gate charge and low

on resistance. This device is suitable for applications with low gate charge

driving or low on resistance requirements.

www.onsemi.com

Features

(on) Max

• Low On-Resistance

• High Speed Switching

• 1.8V drive

• ESD Diode-Protected Gate

• Pb-Free, Halogen Free and RoHS compliance

DSS

D Max

50mΩ@ 4.5V

72mΩ@ 2.5V

130mΩ@ 1.8V

30V

ELECTRICAL CONNECTION

N-Channel

Typical Applications

• DC/DC Converter

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Value

Unit

DSS

GSS

Drain Current (Pulse)

PW ≤ 10μs, duty cycle ≤ 1%

PACKING TYPE : TL

MARKING

Power Dissipation

When mounted on ceramic substrate

(900mm²

× 0.8mm)

Junction Temperature

150

°C

Storage Temperature

Tstg

−55 to +150

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

THERMAL RESISTANCE RATINGS

Parameter

Junction to Ambient

When mounted on ceramic substrate

(900mm²

0.8mm)

Symbol

Value

Unit

θJA

125

°C/W

June 2015 - Rev. 1

Publication Order Number :

MCH3474/D

12 3 4 5

中文翻译

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MCH3475-TL-W	ONSEMI	获取价格	Single N-Channel Power MOSFET 30V,1.8A, 180mΩ, 3000-REEL
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