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MC14069UB_11 PDF预览

MC14069UB_11

更新时间: 2024-09-09 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 135K
描述
Hex Inverter

MC14069UB_11 数据手册

 浏览型号MC14069UB_11的Datasheet PDF文件第2页浏览型号MC14069UB_11的Datasheet PDF文件第3页浏览型号MC14069UB_11的Datasheet PDF文件第4页浏览型号MC14069UB_11的Datasheet PDF文件第5页浏览型号MC14069UB_11的Datasheet PDF文件第6页浏览型号MC14069UB_11的Datasheet PDF文件第7页 
MC14069UB  
Hex Inverter  
The MC14069UB hex inverter is constructed with MOS Pchannel  
and Nchannel enhancement mode devices in a single monolithic  
structure. These inverters find primary use where low power  
dissipation and/or high noise immunity is desired. Each of the six  
inverters is a single stage to minimize propagation delays.  
http://onsemi.com  
Features  
MARKING  
DIAGRAMS  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
Capable of Driving Two LowPower TTL Loads or One  
LowPower Schottky TTL Load Over the Rated Temperature  
Range  
14  
PDIP14  
P SUFFIX  
CASE 646  
MC14069UBCP  
AWLYYWWG  
Triple Diode Protection on All Inputs  
1
PinforPin Replacement for CD4069UB  
Meets JEDEC UB Specifications  
14  
1
SOIC14  
D SUFFIX  
CASE 751A  
These Devices are PbFree and are RoHS Compliant  
14069UG  
AWLYWW  
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
Symbol  
Parameter  
Value  
0.5 to +18.0  
Unit  
V
14  
14  
069U  
ALYWG  
G
V
DD  
DC Supply Voltage Range  
TSSOP14  
DT SUFFIX  
CASE 948G  
V , V  
in out  
Input or Output Voltage Range  
(DC or Transient)  
0.5 to V + 0.5  
V
DD  
I , I  
in out  
Input or Output Current  
(DC or Transient) per Pin  
10  
mA  
1
P
Power Dissipation, per Package  
(Note 1)  
500  
mW  
D
14  
1
SOEIAJ14  
F SUFFIX  
CASE 965  
MC14069UB  
ALYWG  
T
A
Ambient Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
260  
°C  
°C  
°C  
T
stg  
T
Lead Temperature  
(8Second Soldering)  
L
A
WL, L  
YY, Y  
= Assembly Location  
= Wafer Lot  
= Year  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Temperature Derating:  
WW, W = Work Week  
G or G  
= PbFree Package  
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C  
(Note: Microdot may be in either location)  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
highimpedance circuit. For proper operation, V and V should be constrained  
in  
out  
to the range V v (V or V ) v V  
.
SS  
in  
out  
DD  
Unused inputs must always be tied to an appropriate logic voltage level  
(e.g., either V or V ). Unused outputs must be left open.  
SS  
DD  
G
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
June, 2011 Rev. 9  
MC14069UB/D  
 

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