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MC14069UBCPG PDF预览

MC14069UBCPG

更新时间: 2024-11-03 04:59:31
品牌 Logo 应用领域
安森美 - ONSEMI 栅极触发器逻辑集成电路光电二极管
页数 文件大小 规格书
7页 145K
描述
Hex Inverter

MC14069UBCPG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIP
包装说明:DIP, DIP14,.3针数:14
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.11
系列:4000/14000/40000JESD-30 代码:R-PDIP-T14
JESD-609代码:e3长度:18.86 mm
负载电容(CL):50 pF逻辑集成电路类型:INVERTER
功能数量:6输入次数:1
端子数量:14最高工作温度:125 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP14,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260电源:5/15 V
Prop。Delay @ Nom-Sup:125 ns传播延迟(tpd):125 ns
认证状态:Not Qualified施密特触发器:NO
座面最大高度:4.69 mm子类别:Gates
最大供电电压 (Vsup):18 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:7.62 mm
Base Number Matches:1

MC14069UBCPG 数据手册

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MC14069UB  
Hex Inverter  
The MC14069UB hex inverter is constructed with MOS Pchannel  
and Nchannel enhancement mode devices in a single monolithic  
structure. These inverters find primary use where low power  
dissipation and/or high noise immunity is desired. Each of the six  
inverters is a single stage to minimize propagation delays.  
http://onsemi.com  
Features  
MARKING  
DIAGRAMS  
Supply Voltage Range = 3.0 Vdc to 18 Vdc  
Capable of Driving Two LowPower TTL Loads or One LowPower  
Schottky TTL Load Over the Rated Temperature Range  
Triple Diode Protection on All Inputs  
14  
PDIP14  
P SUFFIX  
CASE 646  
MC14069UBCP  
AWLYYWWG  
PinforPin Replacement for CD4069UB  
1
Meets JEDEC UB Specifications  
PbFree Packages are Available  
14  
1
SOIC14  
D SUFFIX  
CASE 751A  
14069UG  
AWLYWW  
MAXIMUM RATINGS (Voltages Referenced to V  
)
SS  
Symbol  
Parameter  
Value  
0.5 to +18.0  
Unit  
V
V
DC Supply Voltage Range  
14  
DD  
14  
069U  
ALYWG  
G
V , V  
Input or Output Voltage Range  
(DC or Transient)  
0.5 to V + 0.5  
V
in out  
DD  
TSSOP14  
DT SUFFIX  
CASE 948G  
I , I  
in out  
Input or Output Current  
(DC or Transient) per Pin  
±10  
mA  
1
P
Power Dissipation, per Package  
(Note 1)  
500  
mW  
D
14  
1
T
Ambient Temperature Range  
Storage Temperature Range  
55 to +125  
65 to +150  
260  
°C  
°C  
°C  
A
SOEIAJ14  
F SUFFIX  
CASE 965  
MC14069UB  
ALYWG  
T
stg  
T
Lead Temperature  
(8Second Soldering)  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Temperature Derating:  
Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C  
This device contains protection circuitry to guard against damage due to high  
static voltages or electric fields. However, precautions must be taken to avoid  
applications of any voltage higher than maximum rated voltages to this  
A
WL, L  
YY, Y  
= Assembly Location  
= Wafer Lot  
= Year  
WW, W = Work Week  
G or G  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
highimpedance circuit. For proper operation, V and V should be constrained  
in  
out  
to the range V v (V or V ) v V  
.
SS  
in  
out  
DD  
Unused inputs must always be tied to an appropriate logic voltage level  
(e.g., either V or V ). Unused outputs must be left open.  
SS  
DD  
G
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
October, 2006 Rev. 8  
MC14069UB/D  
 

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