Datasheet > MC-458CB641ES

MC-458CB641ES

更新时间： 2024-11-04 11:54:03

品牌	Logo	应用领域
尔必达 - ELPIDA		/
页数	文件大小	规格书
16页	146K
描述
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MC-458CB641ES 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-458CB641ES,458CB641PS,458CB641XS

8M-WORD BY 64-BIT

SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-458CB641ES, MC-458CB641PS and MC-458CB641XS are 8,388,608 words by 64 bits synchronous

dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

Clock frequency (MAX.)

125 MHz

Access time from CLK (MAX.)

MC-458CB641ES-A80

6 ns

7 ns

6 ns

7 ns

6 ns

7 ns

100 MHz

MC-458CB641ES-A10

MC-458CB641PS-A80

MC-458CB641PS-A10

MC-458CB641XS-A80

MC-458CB641XS-A10

100 MHz

77 MHz

125 MHz

100 MHz

77 MHz

125 MHz

100 MHz

77 MHz

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0, BA1 (Bank Select)

• Programmable burst-length: 1, 2, 4, 8 and Full Page

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Single 3.3V ±0.3V power supply

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0069N10 (1st edition)

(Previous No. M14015EJ5V0DS00)

Date Published January 2001 CP (K)

This product became EOL in March, 2004.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

Printed in Japan

12 3 4 5 6 7...16

中文翻译

下载PDF

与MC-458CB641ES相关器件

型号	品牌	获取价格	描述	数据表
MC-458CB641ES-A10	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CB641ES-A10	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641ES-A10L	NEC	获取价格	Synchronous DRAM Module, 8MX64, 6ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144
MC-458CB641ES-A80	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CB641ES-A80	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641ES-A80L	RENESAS	获取价格	MEMORY MODULE,SDRAM,8MX64,CMOS,DIMM,144PIN,PLASTIC
MC-458CB641PS	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CB641PS	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641PS-A10	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641PS-A10	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

与MC-458CB641ES相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

31
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

30

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-458CB641ES

MC-458CB641ES 数据手册

与MC-458CB641ES相关器件

与MC-458CB641ES相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MC-458CB641ES

MC-458CB641ES 数据手册

与MC-458CB641ES相关器件

与MC-458CB641ES相关文章

您还可以找

您在本页遇到什么问题？