Datasheet > MC-458CB641ES

MC-458CB641ES

更新时间： 2024-11-26 11:54:03

品牌	Logo	应用领域
尔必达 - ELPIDA		/
页数	文件大小	规格书
16页	146K
描述
8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

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MC-458CB641ES 数据手册

DATA SHEET

MOS INTEGRATED CIRCUIT

MC-458CB641ES,458CB641PS,458CB641XS

8M-WORD BY 64-BIT

SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Description

The MC-458CB641ES, MC-458CB641PS and MC-458CB641XS are 8,388,608 words by 64 bits synchronous

dynamic RAM module (Small Outline DIMM) on which 4 pieces of 128M SDRAM: µPD45128163 are assembled.

These modules provide high density and large quantities of memory in a small space without utilizing the surface-

mounting technology on the printed circuit board.

Decoupling capacitors are mounted on power supply line for noise reduction.

Features

• 8,388,608 words by 64 bits organization

• Clock frequency and access time from CLK

Part number

/CAS latency

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

CL = 3

CL = 2

Clock frequency (MAX.)

125 MHz

Access time from CLK (MAX.)

MC-458CB641ES-A80

6 ns

7 ns

6 ns

7 ns

6 ns

7 ns

100 MHz

MC-458CB641ES-A10

MC-458CB641PS-A80

MC-458CB641PS-A10

MC-458CB641XS-A80

MC-458CB641XS-A10

100 MHz

77 MHz

125 MHz

100 MHz

77 MHz

125 MHz

100 MHz

77 MHz

• Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge

• Pulsed interface

• Possible to assert random column address in every cycle

• Quad internal banks controlled by BA0, BA1 (Bank Select)

• Programmable burst-length: 1, 2, 4, 8 and Full Page

• Programmable wrap sequence (Sequential / Interleave)

• Programmable /CAS latency (2, 3)

• Automatic precharge and controlled precharge

• CBR (Auto) refresh and self refresh

• Single 3.3V ±0.3V power supply

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for

availability and additional information.

Document No. E0069N10 (1st edition)

(Previous No. M14015EJ5V0DS00)

Date Published January 2001 CP (K)

This product became EOL in March, 2004.

Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.

Printed in Japan

12 3 4 5 6 7...16

中文翻译

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与MC-458CB641ES相关器件

型号	品牌	获取价格	描述	数据表
MC-458CB641ES-A10	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CB641ES-A10	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641ES-A10L	NEC	获取价格	Synchronous DRAM Module, 8MX64, 6ns, MOS, 31.75 MM HEIGHT, 0.80 MM PITCH, DIMM-144
MC-458CB641ES-A80	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CB641ES-A80	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641ES-A80L	RENESAS	获取价格	MEMORY MODULE,SDRAM,8MX64,CMOS,DIMM,144PIN,PLASTIC
MC-458CB641PS	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
MC-458CB641PS	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641PS-A10	ELPIDA	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
MC-458CB641PS-A10	NEC	获取价格	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

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