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MBR8200DC PDF预览

MBR8200DC

更新时间: 2024-09-17 11:11:39
品牌 Logo 应用领域
强茂 - PANJIT 二极管瞄准线功效
页数 文件大小 规格书
3页 122K
描述
D2PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER

MBR8200DC 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, PLASTIC, TO-263, D2PAK-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.63
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:150 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:YES
技术:SCHOTTKY端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MBR8200DC 数据手册

 浏览型号MBR8200DC的Datasheet PDF文件第2页浏览型号MBR8200DC的Datasheet PDF文件第3页 
MBR840DC~MBR8200DC  
D2PAK SURFACE MOUNTSCHOTTKYBARRIER RECTIFIER  
CURRENT  
8 Ampere  
VOLTAGE  
40 to 200 Volts  
FEATURES  
• Plastic package has Underwriters Laboratory  
Flammability Classification 94V-O utilizing  
Flame Retardant Epoxy Molding Compound.  
• Exceeds environmental standards of MIL-S-19500/228  
• Low power loss, high efficiency.  
• Low forwrd voltge, high current capability  
• High surge capacity.  
• For use in low voltage,high frequency inverters  
free wheeling , and polarlity protection applications.  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: TO-263/D2PAK molded plastic package  
Terminals: Lead solderable per MIL-STD-750, Method 2026  
• Polarity: As marked.  
• Mounting Position: Any  
• Weight: 0.0514 ounces, 1.46 grams.  
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.  
MBR840DC MBR845DC MBR850DC MBR860DC MBR880DC MBR890DC MBR8100DC MBR8150DC MBR8200DC  
PARAMETER  
SYMBOL  
VR R M  
UNITS  
V
Maximum Recurrent Peak Reverse Voltage  
40  
28  
40  
45  
31.5  
45  
50  
35  
50  
60  
42  
60  
80  
56  
80  
90  
63  
90  
100  
70  
150  
105  
150  
200  
140  
200  
Maximum RMS Voltage  
VR M  
V
V
S
Maximum DC Blocking Voltage  
Maximum Average Forward (See Figure 1)  
VD  
100  
C
IF ( A V  
8
A
)
Peak Forward Surge Current  
wave superimposed on rated load(JEDEC method)  
: 8.3ms single half sine-  
IF S  
150  
A
M
Maximum Forward Voltage at 4.0A  
VF  
IR  
0.70  
0.75  
0.80  
0.90  
V
Maximum DC Reverse Current TJ =25O  
C
0.05  
20  
mA  
at Rated DC Blocking Voltage TJ =100O  
C
Typical Thermal Resistance  
Rθ J C  
3
O C  
/ W  
O C  
-55 to +150  
Operating Junction and Storage Temperature Range  
TJ ,TS  
-65 to +175  
T G  
NOTES : Both Bonding and Chip structure are available.  
STAD-APR.30.2009  
PAGE . 1  

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