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MBR830MFST3G PDF预览

MBR830MFST3G

更新时间: 2024-09-18 01:12:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 64K
描述
SWITCHMODE Power Rectifiers

MBR830MFST3G 数据手册

 浏览型号MBR830MFST3G的Datasheet PDF文件第2页浏览型号MBR830MFST3G的Datasheet PDF文件第3页浏览型号MBR830MFST3G的Datasheet PDF文件第4页 
MBR830MFS, NRVB830MFS  
SWITCHMODE  
Power Rectifiers  
These state−of−the−art devices have the following features:  
Features  
Low Power Loss / High Efficiency  
http://onsemi.com  
New Package Provides Capability of Inspection and Probe After  
Board Mounting  
SCHOTTKY BARRIER  
RECTIFIERS  
Guardring for Stress Protection  
Low Forward Voltage  
150°C Operating Junction Temperature  
Wettable Flacks Option Available  
8 AMPERES  
30 VOLTS  
NRVB Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
5,6  
1,2,3  
These are Pb−Free and Halide−Free Devices  
MARKING  
DIAGRAM  
Mechanical Characteristics:  
Case: Epoxy, Molded  
A
C
C
1
A
A
B830  
AYWZZ  
Lead Finish: 100% Matte Sn (Tin)  
SO−8 FLAT LEAD  
CASE 488AA  
STYLE 2  
Lead and Mounting Surface Temperature for Soldering Purposes:  
Not Used  
260°C Max. for 10 Seconds  
Device Meets MSL 1 Requirements  
B830  
A
Y
= Specific Device Code  
= Assembly Location  
= Year  
MAXIMUM RATINGS  
W
= Work Week  
Rating  
Symbol  
Value  
Unit  
ZZ  
= Lot Traceability  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
RRM  
V
RWM  
V
30  
R
ORDERING INFORMATION  
Average Rectified Forward Current  
I
8.0  
A
A
F(AV)  
(Rated V , T = 143°C)  
R
C
Device  
Package  
Shipping†  
Peak Repetitive Forward Current,  
I
16  
FRM  
MBR830MFST1G  
SO−8 FL  
1500 /  
(Rated V , Square Wave,  
R
(Pb−Free)  
Tape & Reel  
20 kHz, T = 143°C)  
C
Non−Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
150  
A
MBR830MFST3G  
SO−8 FL  
(Pb−Free)  
5000 /  
Tape & Reel  
FSM  
NRVB830MFST1G SO−8 FL  
(Pb−Free)  
1500 /  
Tape & Reel  
Storage Temperature Range  
T
−65 to +150  
−40 to +150  
100  
°C  
°C  
mJ  
stg  
NRVB830MFST3G SO−8 FL  
(Pb−Free)  
5000 /  
Tape & Reel  
Operating Junction Temperature  
T
J
Unclamped Inductive Switching  
Energy (10 mH Inductor,  
Non−repetitive)  
E
AS  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
ESD Rating (Human Body Model)  
ESD Rating (Machine Model)  
3B  
M4  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NOTE: The heat generated must be less than the thermal conductivity from  
Junction−to−Ambient: dPD/dTJ < 1/RJA.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
October, 2013 − Rev. 0  
MBR830MFS/D  

MBR830MFST3G 替代型号

型号 品牌 替代类型 描述 数据表
NRVB830MFST3G ONSEMI

完全替代

SWITCHMODE Power Rectifiers
NRVB830MFST1G ONSEMI

类似代替

SWITCHMODE Power Rectifiers

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