MBR830MFS, NRVB830MFS
SWITCHMODE
Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
http://onsemi.com
• New Package Provides Capability of Inspection and Probe After
Board Mounting
SCHOTTKY BARRIER
RECTIFIERS
• Guardring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Wettable Flacks Option Available
8 AMPERES
30 VOLTS
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
5,6
1,2,3
• These are Pb−Free and Halide−Free Devices
MARKING
DIAGRAM
Mechanical Characteristics:
• Case: Epoxy, Molded
A
C
C
1
A
A
B830
AYWZZ
• Lead Finish: 100% Matte Sn (Tin)
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
• Lead and Mounting Surface Temperature for Soldering Purposes:
Not Used
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
B830
A
Y
= Specific Device Code
= Assembly Location
= Year
MAXIMUM RATINGS
W
= Work Week
Rating
Symbol
Value
Unit
ZZ
= Lot Traceability
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
RRM
V
RWM
V
30
R
ORDERING INFORMATION
Average Rectified Forward Current
I
8.0
A
A
F(AV)
(Rated V , T = 143°C)
R
C
Device
Package
Shipping†
Peak Repetitive Forward Current,
I
16
FRM
MBR830MFST1G
SO−8 FL
1500 /
(Rated V , Square Wave,
R
(Pb−Free)
Tape & Reel
20 kHz, T = 143°C)
C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
I
150
A
MBR830MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
FSM
NRVB830MFST1G SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
Storage Temperature Range
T
−65 to +150
−40 to +150
100
°C
°C
mJ
stg
NRVB830MFST3G SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Operating Junction Temperature
T
J
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
E
AS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
ESD Rating (Human Body Model)
ESD Rating (Machine Model)
3B
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
October, 2013 − Rev. 0
MBR830MFS/D