MBR830 - MBR8100
SCHOTTKY BARRIER RECTIFIER DIODE
VOLTAGE RANGE: 30 - 100 V
CURRENT: 8.0 A
Features
High surge capacity.
!
B
! For use in low voltage, high frequency inverters, free
TO-220AC
C
Dim
A
B
C
D
E
Min
14.9
—
Max
15.1
10.5
2.87
4.06
14.22
0.94
3.91 Ø
6.86
4.70
2.79
0.64
1.40
5.20
wheeling, and polarity protection applications.
G
F
A
Metal silicon junction, majority carrier conduction.
High currentcapacity,low forwardvoltage drop.
!
!
2.62
3.56
13.46
0.68
3.74 Ø
5.84
4.44
2.54
0.35
1.14
4.95
PIN1
2
D
Guard ring forovervoltage protection.
!
F
G
H
I
E
Mechanical Data
P
!
!
Case:JEDECTO-220AC,molded plasticbody
Terminals:Leads,solderable perMIL-STD-750,
J
K
L
I
L
J
P
!
!
!
Method2026
H
All Dimensions in mm
Polarity: Asmarked
Position:Any
PIN 1 +
PIN 2 -
+
Wight:
!
0.064 ounces,1.81 gram
Case
K
TA = 25ꢀC unless otherwise specified
Maximum Ratings and Electrical Characteristics
For capacitive load, derate current by 20%.
Single phase, half wave, 60Hz, resistive or inductive load.
MBR MBR MBR MBR MBR MBR MBR MBR
Symbol
Unit
Characteristic
830
835
840 845
850
860
880 8100
Maximum recurrent peak reverse voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
30
35
40
28
40
45
32
45
50
60
80
56
80
100
70
V
V
V
21
25
35
42
Maximum DC blocking voltage
30
35
50
60
100
Maximum average forw ard total device11111111
IF(AV)
IFSM
8.0
A
A
m rectified current @TC = 125°C
Peak forw ard surge current 8.3ms single half
150
b
sine-w ave superimposed on rated load
)
)
Maximum forw ard
voltage
(IF=8.0A,TC=125
0.57
0.70
-
(I
0.80
0.95
0.85
-
F=8.0A,TC=25
0.70
0.84
V
VF
(Note 1)
(IF=16A,TC=25
)
Maximum reverse current
at rated DC blocking voltage
@TC=25
0.1
15
0.5
50
IR
m A
@TC=125
Maximum thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
3.0
RθJC
TJ
K/W
- 55 ---- + 150
- 55 ---- + 150
TSTG
NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.
2. Thermal resistance f rom junction to case.
1 of 2
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