Datasheet > MBR835

MBR835

更新时间： 2024-11-09 12:21:07

品牌	Logo	应用领域
鲁光 - LGE		二极管功效局域网
页数	文件大小	规格书
2页	234K
描述
Schottky Barrier Rectifiers

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MBR835 技术参数

Case Style：	TO-220AC	IF（A）：	8.0
Maximum recurrent peak reverse voltage：	35	Peak forward surge current：	150
Maximum instantaneous forward voltage：	0.70	@IF(A)：	8.0
Maximum reverse current：	0.1	TJ(℃）：	/
class：	Diodes

MBR835 数据手册

MBR830-MBR8100

Schottky Barrier Rectifiers

VOLTAGE RANGE: 30 - 100 V

CURRENT: 8.0 A

TO-220AC

Features

4.5± 0.2

10.2± 0.2

1.4± 0.2

High surge capacity.

φ 3.8± 0.15

For use in low voltage, high frequency inverters, free

1wheeling, and polarity protection applications.

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

The plastic material carries U/L recognition 94V-0

2.6± 0.2

Mechanical Data

0.9± 0.1

Case:JEDEC TO-220AC,molded plastic body

0.5± 0.1

5.0± 0.1

Polarity: As marked

Position: Any

Dimensions in millimeters

Weight: 0.064 ounces,1.81 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified.

Ratings at 25

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

MBR MBR MBR MBR MBR MBR MBR MBR

UNITS

830

835

840 845

850

860

880 8100

Maximum recurrent peak reverse voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

Maximum DC blocking voltage

100

Maximum average forw ard total device11111111

I_F(AV)

I_FSM

8.0

m rectified current @T_C= 125°C

Peak forw ard surge current 8.3ms single half

150

sine-w ave superimposed on rated load

)

Maximum forw ard

voltage

(I_F=8.0A,T_C=125

0.57

0.70

0.80

0.95

0.85

_F=8.0A,T_C=25

0.70

0.84

V_F

(Note 1)

(IF=16A,TC=25

)

Maximum reverse current

at rated DC blocking voltage

@T_C=25

0.1

0.5

I_R

m A

@T_C=125

Maximum thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

3.0

R_θJC

T_J

K/W

- 55 ---- + 150

T_STG

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

2. Thermal resistance f rom junction to case.

http://www.luguang.cn

mail:lge@luguang.cn

中文翻译

下载PDF

与MBR835相关器件

型号	品牌	获取价格	描述	数据表
MBR835(TO-220A)	CJ	获取价格	Rectifier Diode,
MBR835RL	ONSEMI	获取价格	Axial Lead Rectifiers
MBR840	SIRECTIFIER	获取价格	肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二
MBR840	DIODES	获取价格	8.0A SCHOTTKY BARRIER RECTIFIER
MBR840	KERSEMI	获取价格	Schottky Barrier Chip
MBR840	LGE	获取价格	Schottky Barrier Rectifiers
MBR840	DACHANG	获取价格	Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 8.0 A
MBR840	HY	获取价格	SCHOTTKY BARRIER RECTIFIERS
MBR840	UTC	获取价格	SCHOTTKY BARRIER RECTIFIER
MBR840	ONSEMI	获取价格	Axial Lead Rectifiers