Datasheet > MBR835

MBR835

更新时间： 2024-09-17 04:16:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		二极管功效局域网
页数	文件大小	规格书
2页	200K
描述
SCHOTTKY BARRIER RECTIFIER

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中文翻译

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数据手册

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MBR835 数据手册

GALAXY ELECTRICAL

MBR830 - - - MBR8100

VOLTAGE RANGE: 30 - 100 V

CURRENT: 8.0 A

SCHOTTKY BARRIER RECTIFIER

FEATURES

TO-220AC

High surge capacity.

For use in low voltage, high frequency inverters, free

111wheeling, and polarity protection applications.

Metal silicon junction, majority carrier conduction.

High current capacity, low forward voltage drop.

Guard ring for over voltage protection.

MECHANICAL DATA

Case:JEDEC TO-220AC,molded plastic body

Terminals:Leads, solderable per MIL-STD-750,

1 1

Method 2026

Polarity: As marked

Position: Any

Weight: 0.064 ounces,1.81 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Ratings at 25

MBR MBR MBR MBR MBR MBR MBR MBR

UNITS

830

835

840 845

850

860

880 8100

Maximum recurrent peak reverse voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

Maximum DC blocking voltage

100

Maximum average forw ard total device11111111

I_F(AV)

I_FSM

8.0

m rectified current @T_C= 125°C

Peak forw ard surge current 8.3ms single half

150

sine-w ave superimposed on rated load

)

Maximum forw ard

voltage

(I_F=8.0A,T_C=125

0.57

0.70

0.80

0.95

0.85

_F=8.0A,T_C=25

0.70

0.84

V_F

(Note 1)

(IF=16A,TC=25

)

Maximum reverse current

at rated DC blocking voltage

@T_C=25

0.1

0.5

I_R

m A

@T_C=125

Maximum thermal resistance (Note 2)

Operating junction temperature range

Storage temperature range

3.0

R_θJC

T_J

K/W

- 55 ---- + 150

T_STG

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

2. Thermal resistance f rom junction to case.

www.galaxycn.com

Document Number 0266039

BLGALAXY ELECTRICAL

中文翻译

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