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M68AW256DN55ZB6T PDF预览

M68AW256DN55ZB6T

更新时间: 2024-09-19 19:53:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器内存集成电路
页数 文件大小 规格书
23页 200K
描述
256KX16 STANDARD SRAM, 55ns, PBGA48, 6 X 7 MM, 0.75 MM PITCH, TFBGA-48

M68AW256DN55ZB6T 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:6 X 7 MM, 0.75 MM PITCH, TFBGA-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.83最长访问时间:55 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:7 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.00002 A最小待机电流:1.5 V
子类别:SRAMs最大压摆率:0.015 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)端子形式:BALL
端子节距:0.75 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:6 mm
Base Number Matches:1

M68AW256DN55ZB6T 数据手册

 浏览型号M68AW256DN55ZB6T的Datasheet PDF文件第2页浏览型号M68AW256DN55ZB6T的Datasheet PDF文件第3页浏览型号M68AW256DN55ZB6T的Datasheet PDF文件第4页浏览型号M68AW256DN55ZB6T的Datasheet PDF文件第5页浏览型号M68AW256DN55ZB6T的Datasheet PDF文件第6页浏览型号M68AW256DN55ZB6T的Datasheet PDF文件第7页 
M68AW256D  
4 Mbit (256K x16) 3.0V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.6V  
Figure 1. Packages  
256K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIME: 55ns,  
70ns  
44  
SINGLE BYTE READ/WRITE  
LOW STANDBY CURRENT  
LOW V  
DATA RETENTION: 1.5V  
CC  
TRI-STATE COMMON I/O  
1
AUTOMATIC POWER DOWN  
TSOP44 Type IND)  
DUAL CHIP ENABLE for EASY DENSITY  
EXPANSION  
FBGA  
TFBGA48 (ZB)  
6 x 7 mm  
February 2004  
1/23  

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