是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | 7 X 8 MM, 0.75 MM PITCH, LEAD FREE, TFBGA-48 |
针数: | 48 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.2.A | HTS代码: | 8542.32.00.41 |
风险等级: | 5.83 | Is Samacsys: | N |
最长访问时间: | 55 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-PBGA-B48 | JESD-609代码: | e1 |
长度: | 8 mm | 内存密度: | 4194304 bit |
内存集成电路类型: | STANDARD SRAM | 内存宽度: | 16 |
功能数量: | 1 | 端子数量: | 48 |
字数: | 262144 words | 字数代码: | 256000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 256KX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA48,6X8,30 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 260 |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 最大待机电流: | 0.000009 A |
最小待机电流: | 1.5 V | 子类别: | SRAMs |
最大压摆率: | 0.026 mA | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) |
端子形式: | BALL | 端子节距: | 0.75 mm |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 7 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M68AW256ML55ZB1F | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM | |
M68AW256ML55ZB1T | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM | |
M68AW256ML55ZB6 | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM | |
M68AW256ML55ZB6E | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM | |
M68AW256ML55ZB6F | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM | |
M68AW256ML55ZB6T | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM | |
M68AW256ML55ZH1 | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM | |
M68AW256ML55ZH1E | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM | |
M68AW256ML55ZH1F | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM | |
M68AW256ML55ZH1T | STMICROELECTRONICS |
获取价格 |
4 Mbit (256K x16) 3.0V Asynchronous SRAM |