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M68AW256M55ND6T PDF预览

M68AW256M55ND6T

更新时间: 2024-11-26 04:53:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 静态存储器光电二极管
页数 文件大小 规格书
19页 109K
描述
256KX16 STANDARD SRAM, 55ns, PDSO44, PLASTIC, TSOP2-44

M68AW256M55ND6T 数据手册

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M68AW256M  
M68AW256ML  
4 Mbit (256K x16) 3.0V Asynchronous SRAM  
FEATURES SUMMARY  
SUPPLY VOLTAGE: 2.7 to 3.6V  
Figure 1. Packages  
256K x 16 bits SRAM with OUTPUT ENABLE  
EQUAL CYCLE and ACCESS TIME: 55ns  
LOW STANDBY CURRENT  
44  
LOW V DATA RETENTION: 1.0V  
CC  
1
TRI-STATE COMMON I/O  
AUTOMATIC POWER DOWN  
TSOP44 Type II (ND)  
BGA  
TFBGA48 (ZB)  
6 x 8 ball array  
July 2001  
1/19  

与M68AW256M55ND6T相关器件

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IC,SRAM,256KX16,CMOS,BGA,48PIN,PLASTIC
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256KX16 STANDARD SRAM, 55ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M68AW256M70ND6T STMICROELECTRONICS

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256KX16 STANDARD SRAM, 70ns, PDSO44, PLASTIC, TSOP2-44
M68AW256M70ZB6 STMICROELECTRONICS

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IC,SRAM,256KX16,CMOS,BGA,48PIN,PLASTIC
M68AW256M70ZB6T STMICROELECTRONICS

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256KX16 STANDARD SRAM, 70ns, PBGA48, 0.75 MM PITCH, TFBGA-48
M68AW256ML55ND1 STMICROELECTRONICS

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4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW256ML55ND1E STMICROELECTRONICS

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4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW256ML55ND1F STMICROELECTRONICS

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4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW256ML55ND1T STMICROELECTRONICS

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4 Mbit (256K x16) 3.0V Asynchronous SRAM
M68AW256ML55ND6 STMICROELECTRONICS

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4 Mbit (256K x16) 3.0V Asynchronous SRAM